[1]张家慰,赵正平.用椭圆偏振仪测量50以内硅上的超簿氧化层厚度[J].东南大学学报(自然科学版),1982,12(1):108-112.[doi:10.3969/j.issn.1001-0505.1982.01.011]
 Zhang Jia-wei,and Zhao Zheng-ping.Use of Ellipsometry to Measure the Thicknesses of Less than 50Ultrathin Oxide Film on Silicon[J].Journal of Southeast University (Natural Science Edition),1982,12(1):108-112.[doi:10.3969/j.issn.1001-0505.1982.01.011]
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用椭圆偏振仪测量50以内硅上的超簿氧化层厚度()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
12
期数:
1982年第1期
页码:
108-112
栏目:
本刊信息
出版日期:
1982-03-20

文章信息/Info

Title:
Use of Ellipsometry to Measure the Thicknesses of Less than 50Ultrathin Oxide Film on Silicon
作者:
张家慰赵正平
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Author(s):
Zhang Jia-wei and Zhao Zheng-ping
关键词:
氧化层厚度 椭圆偏振仪 介质折射率 超薄氧化层 测量结果 椭偏参数 重复性 膜厚 薄介质 过渡层
分类号:
+
DOI:
10.3969/j.issn.1001-0505.1982.01.011
摘要:
本文提出了用椭圆偏振仪测量硅上超薄氧化层厚度的方法。用俄歇电子能谱法研究了8A到38A厚的氧化层的组分,从而估计它们的折射率。并用计算机计算了O~50A厚的氧化层所对应的椭偏参数。目前用该方法测得的硅上最薄的氧化层厚为6A,并取得较好的重复性。
Abstract:
In this paper, a method using ellipsometry is described for measuring the thicknesses of ultrathin oxide film on silicon. The composition of 8A to 38A oxide films has been investigated by AES and their refraction is estimated. The ellipsometrical parameters corresponding to 1 to 50A oxide films have been calculated by the computer. The thinest thickness of oxide film on silicon measured by this method is 6A, with good reproducibility.
更新日期/Last Update: 2013-05-01