[1]茅盘松,詹娟,姚建楠,等.达林頓互补逻辑集成电路的研究[J].东南大学学报(自然科学版),1982,12(1):113-124.[doi:10.3969/j.issn.1001-0505.1982.01.012]
 Mao Pan-song,Zha-Jua Yao Jian-nan,Cai Shi-jun.Analysis and Trial-Manufacture of Darlington Complementary Integrated Circuits[J].Journal of Southeast University (Natural Science Edition),1982,12(1):113-124.[doi:10.3969/j.issn.1001-0505.1982.01.012]
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达林頓互补逻辑集成电路的研究()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
12
期数:
1982年第1期
页码:
113-124
栏目:
本刊信息
出版日期:
1982-03-20

文章信息/Info

Title:
Analysis and Trial-Manufacture of Darlington Complementary Integrated Circuits
作者:
茅盘松詹娟姚建楠蔡世俊
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Author(s):
Mao Pan-song Zha-Jua Yao Jian-nan Cai Shi-jun
关键词:
倒相器 达林顿 组合管 瞬态特性 振荡器 互补电路 负载电容 直流特性 输出特性 逻辑集成电路
分类号:
+
DOI:
10.3969/j.issn.1001-0505.1982.01.012
摘要:
本文对两种达林顿组合管的特性进行了分析,给出了实验结果。并对达林顿互补倒相器的直流特性和瞬态特性与常规CMOS倒相器作了比较,说明这种倒相器除了具有CMOS电路的功耗低、电源电压范围宽和抗干扰能力强等特点外,还具有驱动能力强和瞬态特性优异的特长。这种电路的工艺实施并不复杂,对由这种电路组成的15级环行振荡器作了初步研究,给出了实验结果。预计这种电路随着集成电路的发展,将会有越来越广泛的应用。
Abstract:
The characteristics of two kinds of Darlington Complemental Transistors (DCT), which consist of MOSFET and bipolar transistors is analysed and experimental results are given. A comparisicn with the CMOS inverter shows that the DCT inverter not only keeps the main advantages of CMOS circuit such as lower power dissipation, large tolerance for variations in supply voltage and high noise immunity, but also offer higher sinking and sourcing capability and better switching characteristics. The manfacturing process for DCT is not complicated. A preliminary study of a DCT ring oscillator of fifteen stages is made and the result is shown.

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 Xie Shi-jian. Zhao Wen-xia.Design of Reasonable Structure for High Speed CMOS Circuits[J].Journal of Southeast University (Natural Science Edition),1984,14(1):106.[doi:10.3969/j.issn.1001-0505.1984.02.012]
[2]谢世健,丁璇英.封闭硅栅CMOS电路经济结构设计[J].东南大学学报(自然科学版),1984,14(4):76.[doi:10.3969/j.issn.1001-0505.1984.04.008]
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更新日期/Last Update: 2013-05-01