[1]郑其经,陈德英,庄庆德,等.多晶硅薄膜淀积的核化和早期生长[J].东南大学学报(自然科学版),1982,12(2):91-104.[doi:10.3969/j.issn.1001-0505.1982.02.008]
 Zheng Qi-jing. Chen De-ying,Zhuang Qing-de,and Wu Zhen-chan.Nucleation and Early stage Growth of Polycrystalline Silicon Deposition[J].Journal of Southeast University (Natural Science Edition),1982,12(2):91-104.[doi:10.3969/j.issn.1001-0505.1982.02.008]
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多晶硅薄膜淀积的核化和早期生长()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
12
期数:
1982年第2期
页码:
91-104
栏目:
本刊信息
出版日期:
1982-06-20

文章信息/Info

Title:
Nucleation and Early stage Growth of Polycrystalline Silicon Deposition
作者:
郑其经陈德英庄庆德吴振婵
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Author(s):
Zheng Qi-jing. Chen De-yingZhuang Qing-de and Wu Zhen-chan
关键词:
多晶硅薄膜 硅衬底 淀积层 均匀核化 晶粒大小 淀积过程 高温条件 凝聚核 不同衬底 早期生长
分类号:
+
DOI:
10.3969/j.issn.1001-0505.1982.02.008
摘要:
研究了在常压SiH_4-H_2系统中,于1050C下,在不同衬底上所获得的多晶硅淀积层的结构和核化生长过程。实验发现,衬底性质对核化过程和早期淀积层结构有影响。与热生长SiQ_2衬底比较,SiO_2+Si_3N_4 复合衬底上的淀积具有核化过程发生早,岛核尺寸小密度高,淀积层晶粒细密等特点。SiO_2 同H_2及淀积硅的反应是影响高温条件下在SiO_2衬底上核化和生长的原因。文章还讨论了核化阶段的相变过程。
Abstract:
The process of nucleation and structure of polycrystalline silicon film dep-osited on Various substrates at 1050℃ in silane-hydrogen system are investigated It has been found that both the nucleation behaviour and structural feature of the layer deposited in the early stage depend upon the nature of substrates.In comparison with that on substrates of silicon oxide,the deposition on silicon nitride layer which coveres the oxide surface results in earlier nucleation,sm-aller size and heigher density of nucleus inslands, and firmer grains. Reactions of silicon oxide with hydrogen and silicon deposited on it play an important role in the nucleation and growth of polycrystalline silicon on oxide substrates,and produce results different from those on the inert nitride substrates. The phase change in the condensed nuclei is also discussed.

相似文献/References:

[1]庄庆德,郑其经,陈德英,等.单晶硅/多晶硅同步定积过程中的边缘效应及二维扩散滞流层模型[J].东南大学学报(自然科学版),1982,12(2):105.[doi:10.3969/j.issn.1001-0505.1982.02.009]
 Zhuong Qing-de,Zheng Qi-jing,Chen De-ying,et al.Fringe Effect During EPI/Polysilicon Co-Deposition and a Model of Two-Dimensional Diffusion in the stagnant Layer[J].Journal of Southeast University (Natural Science Edition),1982,12(2):105.[doi:10.3969/j.issn.1001-0505.1982.02.009]

更新日期/Last Update: 2013-05-01