[1]庄庆德,郑其经,陈德英,等.单晶硅/多晶硅同步定积过程中的边缘效应及二维扩散滞流层模型[J].东南大学学报(自然科学版),1982,12(2):105-114.[doi:10.3969/j.issn.1001-0505.1982.02.009]
 Zhuong Qing-de,Zheng Qi-jing,Chen De-ying,et al.Fringe Effect During EPI/Polysilicon Co-Deposition and a Model of Two-Dimensional Diffusion in the stagnant Layer[J].Journal of Southeast University (Natural Science Edition),1982,12(2):105-114.[doi:10.3969/j.issn.1001-0505.1982.02.009]
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单晶硅/多晶硅同步定积过程中的边缘效应及二维扩散滞流层模型()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
12
期数:
1982年第2期
页码:
105-114
栏目:
本刊信息
出版日期:
1982-06-20

文章信息/Info

Title:
Fringe Effect During EPI/Polysilicon Co-Deposition and a Model of Two-Dimensional Diffusion in the stagnant Layer
作者:
庄庆德郑其经陈德英吴振婵
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Author(s):
Zhuong Qing-de Zheng Qi-jing Chen De-yingand Wu Zhen-chan
关键词:
边缘效应 淀积多晶硅 单晶硅 滞流层 硅衬底 水平扩散 工艺参数 淀积条件 扩散模型 介质膜
分类号:
+
DOI:
10.3969/j.issn.1001-0505.1982.02.009
摘要:
在选择复盖SiO_2或Si_■N_4的硅衬底上,进行了单晶硅和多晶硅的同步淀积实验。对于SiO_2-Si衬底,在相当广泛的实验条件下,观察到在SiO_2-Si边界附近存在着异常核化现象。即边缘效应,而在Si_3N_4-Si衬底上则不出现边缘效应。本文认为边缘效应的起因在于反应物沿衬底表面的水平扩散流,并提出了一个二维扩散滞流层模型。从这个模型出发,可以半定量地估计各工艺参数与边缘效应的关系,理论与实验观察很好地一致。
Abstract:
Experiments were carried out in which monocrystalline and polycrystalline silicon are simultaneously deposited on Si substrates selectively covered with SiO-2 or Si-3N-4 film.The fringe effect of abnormal nucleation on a narrow area of SiO-2 near SiO-2/Si boundary is observed in a wide range of experimental conditions for SiO-2/Si substrates, but it does not take place on Si-3N-4/Si substrates. In this paper the fringe effect is explained by a horizontal diffusional flow, and a semiquantitative estimation is made by means of a two-dimensional diffusion model in the stagnant layer.
更新日期/Last Update: 2013-05-01