[1]吕世骥,朱明程.由MOS结构的瞬态响应确定少数载流子体产生寿命和表面产生速度的新方法[J].东南大学学报(自然科学版),1982,12(3):194-200.[doi:10.3969/j.issn.1001-0505.1982.03.013]
 Lü Shi-ji,and Zhu Ming-cheng.A New Method for Determining the Bulk Generation Lifetime and Surface Generation Rate of Minority Carriers from the Transient Response of a MOS Structure[J].Journal of Southeast University (Natural Science Edition),1982,12(3):194-200.[doi:10.3969/j.issn.1001-0505.1982.03.013]
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由MOS结构的瞬态响应确定少数载流子体产生寿命和表面产生速度的新方法()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
12
期数:
1982年第3期
页码:
194-200
栏目:
本刊信息
出版日期:
1982-09-20

文章信息/Info

Title:
A New Method for Determining the Bulk Generation Lifetime and Surface Generation Rate of Minority Carriers from the Transient Response of a MOS Structure
作者:
吕世骥朱明程
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Author(s):
Lü Shi-ji and Zhu Ming-cheng
关键词:
表面产生速度 少数载流子 体产生寿命 瞬态响应 阶跃电压 修正因子 新方法 解析表达式 数据处理 确定
分类号:
+
DOI:
10.3969/j.issn.1001-0505.1982.03.013
摘要:
在将表面产生速度看作常数的条件下,本文导出了MOS结构对阶跃电压瞬态响应曲线的解析表达式。从而提出了一种无需Zerbst图而能同时确定少数载流子体产生寿命和表面产生速度的新方法。对一些样品进行了测量。计算结果表明本方法较之其它方法更为简便。
Abstract:
In this paper an analytical expression of the C—t transient response curve of a MOS structure has been derived under the condition that the surface generation rate can be regarded a constant. Then a new method for determining simultaneously the bulk lifetime and surface generation rate of minority carriers is presented, which needs no Zerbst plot. Measurments for some samples have been made. Calculated results show that this method is simpler and more convenient than some others.
更新日期/Last Update: 2013-05-01