[1]童勤义,唐国洪,庄庆德,等.300伏全兼容CMOS集成电路器件设计与工艺[J].东南大学学报(自然科学版),1984,14(4):68-75.[doi:10.3969/j.issn.1001-0505.1984.04.007]
 Tong Qinyi Tang Guohong Zhuang Qingde Chen Deying.Process and Device Design of a fully Compatible 300-volt CMOSIC[J].Journal of Southeast University (Natural Science Edition),1984,14(4):68-75.[doi:10.3969/j.issn.1001-0505.1984.04.007]
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300伏全兼容CMOS集成电路器件设计与工艺()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
14
期数:
1984年第4期
页码:
68-75
栏目:
本刊信息
出版日期:
1984-12-20

文章信息/Info

Title:
Process and Device Design of a fully Compatible 300-volt CMOSIC
作者:
童勤义唐国洪庄庆德陈德英
南京工学院无线电电子学研究所
Author(s):
Tong Qinyi Tang Guohong Zhuang Qingde Chen Deying
Research Institute of Electronics
关键词:
大规模集成电路 击穿电压 器件设计 高压器件 漂移区长度 等离子显示 导通电阻 兼容工艺 工艺步骤 触发器
分类号:
+
DOI:
10.3969/j.issn.1001-0505.1984.04.007
摘要:
本文介绍一种与Ⅳ阱硅栅CMOS集成电路技术完全兼容的高压MOS器件的设计方法和制备工艺。这种高压MOS器件可以和CMOS逻辑电路、模拟电路集成在同一芯片上而不需任何附加工艺步骤。此种器件的闽电压为|1±0.2|V,漏击穿电压大于300V,泄漏电流小于50nA,当宽长此为115,栅偏压V_{GS}=10V时,其饱和电流大于35mA,跨导大于4000μ,而导通电阻小于600Ω。该器件在等离子显示、静电复印、场致发光、高低压开关等方面有广泛的应用。
Abstract:
This paper describes the design and process of a high voltage MOS device which is fully compatible with N-well Si-gate CMOS ICS.The device can be integrated on the same chip with standard CMOS digital and/or analogue circuits without any additional process steps. It has a typical threshold voltage of |1±0.2|V. A drain breakdown-voltage over 300 V and a drain leakage current less than 50nA have been achieved, A drain saturated current of 30 mA, a dynamic on-resistance of 800Ω or less, and a transconductance of 4000 μΩ or more at V_{GS}=10V with an aspect ratio of 115 are observed. This device may be used in a wide range of applications, such as plasma display, duplicator,field-induced luminescence and H/L voltage switches.
更新日期/Last Update: 2013-05-01