[1]陆明莹,张家慰,简耀光.热氮化二氧化硅膜的研究[J].东南大学学报(自然科学版),1985,15(1):88-93.[doi:10.3969/j.issn.1001-0505.1985.01.009]
 Lu Minyin Zhang Jiawei Jian yaoguong.An Investigation on the Thermally Nitrided SiO_2 Films[J].Journal of Southeast University (Natural Science Edition),1985,15(1):88-93.[doi:10.3969/j.issn.1001-0505.1985.01.009]
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热氮化二氧化硅膜的研究()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
15
期数:
1985年第1期
页码:
88-93
栏目:
本刊信息
出版日期:
1985-03-20

文章信息/Info

Title:
An Investigation on the Thermally Nitrided SiO_2 Films
作者:
陆明莹张家慰简耀光
南京工学院电子工程系; 南京工学院电子工程系 研究生; 讲师; 副教授
Author(s):
Lu Minyin Zhang Jiawei Jian yaoguong
Department of Electronic Engineering
关键词:
二氧化硅膜 热氮化 折射率 电学性能 氮化时间 氮化硅 氮氧化硅 栅介质 击穿场强 界面陷阱密度
分类号:
+
DOI:
10.3969/j.issn.1001-0505.1985.01.009
摘要:
用氨气对热生长的二氧化硅膜进行了氮化处理,测试了膜的电学特性,并研究了工艺对它们的影响。实验发现,热氮化二氧化硅膜兼有二氧化硅与氮化硅膜的优点,而且界面电荷在较大范围内具有可控的特点。用AES表面分析技术研究了热氮化二氧化硅膜的结构。还探讨了二氧化硅膜热氮化的机理。
Abstract:
Thermal SiO_2 films were thermally nitrided in anhydrous NH_3. The electrical characteristics of the resulted films were measured and the infuences of the technological conditions were investigated. The experiment_3 showed that thermally nitrided SiO_2 film had both the advantages of SiO_2 and Si_3N_4. Its interface charge may be controled by the nitridation condition in larger range. The structure of the films was analyzed byz the surface analysis method of AES. The machanism of the thermal nitridation of SiO_2 film was discussed.
更新日期/Last Update: 2013-05-01