[1]吕世骥,赵杰,马见慈,等.γ辐照对MOS结构中可动离子的影响[J].东南大学学报(自然科学版),1985,15(2):96-102.[doi:10.3969/j.issn.1001-0505.1985.02.011]
 Lu Shiji,Zhao Jie,Ma Jianci,et al.Influences of Gamma Irradiation on Mobile Ions in MOS Structure[J].Journal of Southeast University (Natural Science Edition),1985,15(2):96-102.[doi:10.3969/j.issn.1001-0505.1985.02.011]
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γ辐照对MOS结构中可动离子的影响()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
15
期数:
1985年第2期
页码:
96-102
栏目:
本刊信息
出版日期:
1985-06-20

文章信息/Info

Title:
Influences of Gamma Irradiation on Mobile Ions in MOS Structure
作者:
吕世骥赵杰马见慈吴宗汉
南京工学院电子工程系; 南京工学院物理化学系; 南京工学院物理化学系 进师; 研究生; 讲师
Author(s):
Lu Shiji Zhao Jie Ma Jianci Wu Zonghan
Dept. of Electronic Eng. ?Dept. of Physics and Chemistry
关键词:
可动离子 陷阱能级 辐照效应 陷阱电荷 内建场 二氧化硅层 离子发射 测量研究 射线辐照 中性化
分类号:
+
DOI:
10.3969/j.issn.1001-0505.1985.02.011
摘要:
本工作利用TSIC和B-T测量研究了经^{60}Coγ射线辐照后MOS结构的SiO_2薄膜中可动离子能量状态和数量的变化。研究表明,辐照后SiO_2膜中可动离子的最可几陷阱能量下降,且离子总量大大减少。利用内建场增强离子发射模型和可动离子中性化模型对实验结果进行了讨论。计算表明理论与实验吻合较好。
Abstract:
In this paper the change of energy and amount of mobile ions in SiO_2 film of MOS structure undergone γ-rays irradiation had been studied with TSIC and B-T technics. The results show that the most probable energy of mobile ions traped in SiO_2 film decreases, and the amount of ions also greatly reduces. Experimental results had been explained by means of built-in field enhance ion emission and ion neutralized models. Calculations show that the theoretical results coincide well with that obtained from experiments.
更新日期/Last Update: 2013-05-01