[1]高中林,汪开源,李远进.不同温度下n-InP吸收系数测定及能带结构的讨论[J].东南大学学报(自然科学版),1985,15(4):82-87.[doi:10.3969/j.issn.1001-0505.1985.04.009]
 Gao Zhong ling,Whang Kai yuan,Li Yuan jing.Measurement of Absorption Coefficients of n-InP Different Temperatures and Discussion on Band Structure[J].Journal of Southeast University (Natural Science Edition),1985,15(4):82-87.[doi:10.3969/j.issn.1001-0505.1985.04.009]
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不同温度下n-InP吸收系数测定及能带结构的讨论()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
15
期数:
1985年第4期
页码:
82-87
栏目:
本刊信息
出版日期:
1985-12-20

文章信息/Info

Title:
Measurement of Absorption Coefficients of n-InP Different Temperatures and Discussion on Band Structure
作者:
高中林汪开源李远进
南京工学院电子工程系; 南京工学院电子工程系 讲师; 讲师; 教师
Author(s):
Gao Zhong ling Whang Kai yuan Li Yuan jing
Department of Electronic Engineering
关键词:
不同温度 吸收系数 能带结构 吸收限 温度变化 自由载流子吸收 吸收边 测定 导带 半导体材料
分类号:
+
DOI:
10.3969/j.issn.1001-0505.1985.04.009
摘要:
本文从基本吸收限到2μm范围内,在不同温度下、测定了掺Sn的n-InP单晶的吸收系数。从吸收谱着手,研究了主吸收边、中心导带底及相邻导带谷能量差ΔE对温度的依赖关系,以及温度变化时,能带结构的变化趋势。
Abstract:
Absorption coefficients of n-type InP as a fuction of wavelength ranged from the fundamental absorption edge to 2μm unber different temperatures are determined in this paper. From the absorption spectra, we studied dependences of the fundamental absorption edge, the base of central conduction-band and the energy differences between the adjacent conduction-band valleys ΔE on the temperature, and the changes in band structures when the temperatures are changed.
更新日期/Last Update: 2013-05-01