[1]黄玉辉,王小然.在Ge和GaAs衬底上气相生长Znse异质结外延膜[J].东南大学学报(自然科学版),1986,16(4):128-131.[doi:10.3969/j.issn.1001-0505.1986.04.016]
 Huang Yuhui,Wang Xiaoran.The Vapour Phase Growth of ZnSe Heteroepitaxy Thin Film on Ge and GaAs Substrate[J].Journal of Southeast University (Natural Science Edition),1986,16(4):128-131.[doi:10.3969/j.issn.1001-0505.1986.04.016]
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在Ge和GaAs衬底上气相生长Znse异质结外延膜()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
16
期数:
1986年第4期
页码:
128-131
栏目:
本刊信息
出版日期:
1986-07-20

文章信息/Info

Title:
The Vapour Phase Growth of ZnSe Heteroepitaxy Thin Film on Ge and GaAs Substrate
作者:
黄玉辉王小然
南京工学院电子工程系
Author(s):
Huang Yuhui Wang Xiaoran
Department of Electronic Engineering
关键词:
heterojunction vapour phase epitaxy compound semiconductor optical materical.
Keywords:
heterojunction vapour phase epitaxy compound semiconductor optical materical
分类号:
+
DOI:
10.3969/j.issn.1001-0505.1986.04.016
摘要:
<正> 一、引言 ZnSe是重要的发光材料。由于Ge和GaAs与ZnSe的品格常数十分接近,它们品格匹配较好,所以生长出来的ZnSc外延层质量较好;另外,以Ge为衬底成本较低,以GaAs为衬底生长ZnSe光学薄膜,可为光学集成创造有利的条件。
Abstract:
A good characteristic ZnSe heteroepitaxy thin film has been successfully grown by vapour phase epitaxy on Ge and GaAs substrate. The P—N [(P) Ge—ZnSe (n) and (P) GaAs—ZnSe (n)] heterojunction is made through reduced resistance and doping. The "self—compensating" effect of Ⅱ—Ⅵ compound semiconductors which can’t be made into P—N junction is overcome. The X ray analysis, Laue photograph, Ⅰ—Ⅴ and C—V measure indicate: the quality of ZnSe epitaxial thin film is quite good, which can be made into significant optical materials.
更新日期/Last Update: 2013-05-01