[1]魏同立,何野.用于SPICEⅡ程序的耗尽型MOS器件模型[J].东南大学学报(自然科学版),1986,16(5):54-61.[doi:10.3969/j.issn.1001-0505.1986.05.007]
 Wei Tongli,Ho Yie.A Depletion Mode MOSFET Model for SPICE Ⅱ Program[J].Journal of Southeast University (Natural Science Edition),1986,16(5):54-61.[doi:10.3969/j.issn.1001-0505.1986.05.007]
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用于SPICEⅡ程序的耗尽型MOS器件模型()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
16
期数:
1986年第5期
页码:
54-61
栏目:
本刊信息
出版日期:
1986-09-20

文章信息/Info

Title:
A Depletion Mode MOSFET Model for SPICE Ⅱ Program
作者:
魏同立何野
南京工学院电子工程系
Author(s):
Wei Tongli Ho Yie
Department of Electronic Engineering
关键词:
耗尽型MOS器件模型 线性区 饱和区 阈值电压
Keywords:
depletion mode MOSFET model linear region saturated region threshold voltage
分类号:
+
DOI:
10.3969/j.issn.1001-0505.1986.05.007
摘要:
分析了SPICEⅡ程序模拟耗尽型MOS器件所遇到的限制及其原因,用线性区阈电压和饱区阈电压描述耗尽型器件线性区和饱和区特性,讨论了饱和区阈电压与线性区阈电压之差随衬偏电压变化的关系,建立了耗尽型MOS器件模型及其参数提取的新方法。模拟结果与实验基本吻合。
Abstract:
This paper analyses the limitation cause of SPICEⅡ program used to simulate the characteristics of depletion mode MOSFET and discribes the characteristics of depletion mode device in saturated and linear regions by using the saturated threshold voltage and linear threshold voltage. The paper also, discusses the difference between saturated and linear threshold voltage versus the back bias voltage, and presents a model of depiction mode MOS transistor and a new parameter extraction method. The simulation results are in good agreement with experimental data.
更新日期/Last Update: 2013-05-01