[1]何野,魏同立.LSIMOS器件的两维分析[J].东南大学学报(自然科学版),1987,17(1):11-17.[doi:10.3969/j.issn.1001-0505.1987.01.002]
 Ho Yie,Wei Tongli.Two Dimensional Analysis of LSIMOS Devices[J].Journal of Southeast University (Natural Science Edition),1987,17(1):11-17.[doi:10.3969/j.issn.1001-0505.1987.01.002]
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LSIMOS器件的两维分析()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
17
期数:
1987年第1期
页码:
11-17
栏目:
本刊信息
出版日期:
1987-01-20

文章信息/Info

Title:
Two Dimensional Analysis of LSIMOS Devices
作者:
何野魏同立
南京工学院电子工程系
Author(s):
Ho Yie Wei Tongli
Department of Electronic Engineering
关键词:
MOS器件 两维分析 模拟
Keywords:
MOS device two dimensional analysis simulation
分类号:
+
DOI:
10.3969/j.issn.1001-0505.1987.01.002
摘要:
本文应用Gummel自洽场理论对LSIMOS器件进行了两维分析,并开发了相应的模拟软件,模拟结果与实验基本吻合。
Abstract:
In this paper, a two dimensional analysis for LSIMOS devices is made by using Gummel’s self consistent theory and a corresponding simulation software is developed. The simulation result is in good agreement with experimental data.
更新日期/Last Update: 2013-04-30