[1]张安康.用深能级瞬态谱作半导体器件的失效机理分析[J].东南大学学报(自然科学版),1987,17(1):18-25.[doi:10.3969/j.issn.1001-0505.1987.01.003]
 Zhang Ankang.Failure Mechanism Analysis of Semiconductor Devices with Deep Level Transient Spectroscopy[J].Journal of Southeast University (Natural Science Edition),1987,17(1):18-25.[doi:10.3969/j.issn.1001-0505.1987.01.003]
点击复制

用深能级瞬态谱作半导体器件的失效机理分析()
分享到:

《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
17
期数:
1987年第1期
页码:
18-25
栏目:
本刊信息
出版日期:
1987-01-20

文章信息/Info

Title:
Failure Mechanism Analysis of Semiconductor Devices with Deep Level Transient Spectroscopy
作者:
张安康
南京工学院电子工程系
Author(s):
Zhang Ankang?
Department of Electronic Engineering
关键词:
深能级瞬态谱仪 失效机理 杂质和缺陷 表面失效和体内失效
Keywords:
decp level transient spectroscopy failure mechansm impurity and defect surface and main body failure
分类号:
+
DOI:
10.3969/j.issn.1001-0505.1987.01.003
摘要:
本文利用深能级瞬态谱DLTS技术,对器件的失效批理作了分析探讨。指出用DLTS技术,不必将失效器件启封,就可以区别是属于体内失效还是表面失效,对于由深能级杂质影响电参数的器件,可以有效地进行失效机理分析。
Abstract:
Using deep level transient spectroscopy technique the failure mechanism of semiconductor devices is discussed in this paper. The author shows that failure may be determined without decanning the failed devices whether it is resulted from the defects of the main body or of the surface. It is also available to analyze the failure mechanism of the devices of which the parameters are effected by the deep level impurity.

相似文献/References:

[1]吴冲若,诸玉华,陈章其.显象管失效机理的研究[J].东南大学学报(自然科学版),1981,11(4):36.[doi:10.3969/j.issn.1001-0505.1981.04.005]
 Wu Chong-ruo,Zhu Yu-hua,and Chen Zhang-qi.The Research for Failure Mechanism of TV Tubes[J].Journal of Southeast University (Natural Science Edition),1981,11(1):36.[doi:10.3969/j.issn.1001-0505.1981.04.005]

更新日期/Last Update: 2013-04-30