[1]黄玉辉.In_{1-x}Ga_xAs_yP_{1-y}/InP液相外延材料的组分分析[J].东南大学学报(自然科学版),1987,17(4):152-157.[doi:10.3969/j.issn.1001-0505.1987.04.019]
 Huang Yuhui (Department of Electronic Engineering).The Composition Analysis of In_{1-x}Ga_xAs_yP_{1-y}Inp/np LPE Materials[J].Journal of Southeast University (Natural Science Edition),1987,17(4):152-157.[doi:10.3969/j.issn.1001-0505.1987.04.019]
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In_{1-x}Ga_xAs_yP_{1-y}/InP液相外延材料的组分分析()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
17
期数:
1987年第4期
页码:
152-157
栏目:
本刊信息
出版日期:
1987-07-20

文章信息/Info

Title:
The Composition Analysis of In_{1-x}Ga_xAs_yP_{1-y}Inp/np LPE Materials
作者:
黄玉辉
南京工学院电子工程系
Author(s):
Huang Yuhui (Department of Electronic Engineering)
关键词:
liquid phase epitaxy(LPE) composition determination scanning electron microscope (SEM) optical absorption method.
Keywords:
liquid phase epitaxy(LPE) composition determination scanning electron microscope (SEM) optical absorption method
分类号:
+
DOI:
10.3969/j.issn.1001-0505.1987.04.019
摘要:
<正> 一引言随着光纤通信技术的发展,发射波长λ=1.3μm光纤损耗小、色散低的光源制造已受到普遍重视。由于外延材料是器件制造的基础,因此如何确定和控制四元材料In_{1-x}Ga_xAs_yP_{1-y}的组分x、y,乃是制造发射波长λ=1.3μm光源的重要问题。四元材料In_{1-x}Ga_xAs_yP_{1-y}有二个自由度x、y,且其晶格常数和带隙(波长)是x,y的函数(服从Vegard定律),适当调整化学配比可使InGaAsP四元固溶体的带隙在1.35eV~0.74eV(对应波长λ=0.92~1.68μm)范围内变化,能得到与InP衬底相匹配的完整的外延
Abstract:
In_{1-x}Ga_xAs_yP_{1-y} apitaxial material lattice matchad to (100) InP substractes have been successfully grown with LPE method. The emitting wavelength λ of epitaxial materials is 1.3μm. According to Hsich’s equation and Kuphal’s phase diagram, the composition X_i^l of solution and composition x, y of solid and chemical propartion can be determined. In addition, the weights of InP, InAs and GaAs, i. e. W_{InP}, W_{InAs}, and W_{GaAs}, are derived. In conclusion, the emitting wavelength λ of LPE materials have been measured by the optical absorption method and scanning electron microscope; experiment results and theorical calculations are compared.
更新日期/Last Update: 2013-05-01