[1]汪开源,高中林,徐伟弘.InGaAs/InP异质结光电二极管中的深能级协助隧穿电流[J].东南大学学报(自然科学版),1987,17(5):44-50.[doi:10.3969/j.issn.1001-0505.1987.05.005]
 Wang Kaiyuan Gao Zhonglin Xu Weihong (Department of Eleetronic Engineering).Deep Level Assisted-Tunneling Current in InGaAs/InP Heterostructure Photodiode[J].Journal of Southeast University (Natural Science Edition),1987,17(5):44-50.[doi:10.3969/j.issn.1001-0505.1987.05.005]
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InGaAs/InP异质结光电二极管中的深能级协助隧穿电流()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
17
期数:
1987年第5期
页码:
44-50
栏目:
本刊信息
出版日期:
1987-09-20

文章信息/Info

Title:
Deep Level Assisted-Tunneling Current in InGaAs/InP Heterostructure Photodiode
作者:
汪开源高中林徐伟弘
南京工学院电于工程系; 南京工学院电于工程系
Author(s):
Wang Kaiyuan Gao Zhonglin Xu Weihong (Department of Eleetronic Engineering)
关键词:
半导体 异质结光二极管 深能级协助隧穿电流
Keywords:
semiconductor heterojunction photodiode tunneling current
分类号:
+
DOI:
10.3969/j.issn.1001-0505.1987.05.005
摘要:
InGaAs/InP 异质结光电二极管是用于1.2—1.6μm 波长范围光纤系统的一种重要光电器件。本文采用“深能级瞬态谱仪”(DLTS)对它进行了测试。发现其中有一电子陷阱存在,它的热激活能为0.44eV,能级密度为3.10×10^1 cm^?,电子俘获截面为1.72×10^{-12}cm^2。研究结果表明它的产生与位于 InGaAs/InP 异质结界面缺陷和 p-InP 层中掺杂剂 Zn 的相互作用有关。同时,通过对管子暗电流的分析,确证所测深能级导致管中出现一新的暗电流成份——深能级协助隧穿电流。
Abstract:
InGaAs/InP heterostructure photodiode is an important optoelectronic device which is being used in optical communication systems in the wavele- ngth range of(1(?)—1.6)μm.Deep-level transient spectroscopy(DLTS)has been used to measure the InGaAs/InP heterostructure photodiode.An electro- nic trap which has a thermal activation energy of 0.44eV,level concentration of 3.10·10^1 cm^- and electron capture cross section of 1.72·10^{-12}cm^2 has been first found near the p-InP/n-InGa.As heterostructure interface of the photodiode.It seems that the action of the dopant Zn in p-InP and the defe- cts near the InGaAs/InP heterojunction interface results in the deep level. The dark current of InGaAs/InP heterostrueture photodiode is also ana- lyzed.It is comfirmed that the deep level may affect the dark current I_d of the photodiode.Therefore,there is a new dark current component—deep level assisted tunneling current.

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更新日期/Last Update: 2013-05-01