[1]谢世健,朱静远,张会珍.MOS/双极高压复合结构中可控硅效应的抑制[J].东南大学学报(自然科学版),1988,18(4):138-141.[doi:10.3969/j.issn.1001-0505.1988.04.018]
 Xie Shijian Zhu Jingyuan Zhang Huizhen (Microelectronic Center).Strategy to Suppress the Latch-up Effect in High Voltage BIMOS Transistor Structures[J].Journal of Southeast University (Natural Science Edition),1988,18(4):138-141.[doi:10.3969/j.issn.1001-0505.1988.04.018]
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MOS/双极高压复合结构中可控硅效应的抑制()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
18
期数:
1988年第4期
页码:
138-141
栏目:
本刊信息
出版日期:
1988-07-20

文章信息/Info

Title:
Strategy to Suppress the Latch-up Effect in High Voltage BIMOS Transistor Structures
作者:
谢世健朱静远张会珍
南京工学院微电子中心; 南京工学院微电子中心
Author(s):
Xie Shijian Zhu Jingyuan Zhang Huizhen (Microelectronic Center)
关键词:
combined structures latch-up mechanism measures to prevent.
Keywords:
combined structures latch-up mechanism measures to prevent
分类号:
+
DOI:
10.3969/j.issn.1001-0505.1988.04.018
摘要:
<正> 本文分析了具有偏置栅又有延伸源场极的高压MOS结构和双极型器件复合结构中产生可控硅效应的机理,从而得出如何在材料、几何结构和工艺参数上采取措施,抑制和防止可控硅效应的产生。
Abstract:
The latchup mechanism in bipolar/MOS combined transistor structures is analysed. In particular, the measures to prevent latch-up effects in the high voltage device structure composed of a bipolar transistor and a MOS structure with an offset gate and an extended source field plate are investigated.
更新日期/Last Update: 2013-04-30