[1]吕世骥,蔡跃明,郭耀华.等离子体氮化SiO_2膜中电子陷阱的研究[J].东南大学学报(自然科学版),1989,19(2):22-27.[doi:10.3969/j.issn.1001-0505.1989.02.004]
 Lü Shiji Cai Yueming Guo Yaohua (Department of Electronic Engneering).The Research on Electron Trap in SiO_2 Film Nitrided by Plasma[J].Journal of Southeast University (Natural Science Edition),1989,19(2):22-27.[doi:10.3969/j.issn.1001-0505.1989.02.004]
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等离子体氮化SiO_2膜中电子陷阱的研究()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
19
期数:
1989年第2期
页码:
22-27
栏目:
本刊信息
出版日期:
1989-03-20

文章信息/Info

Title:
The Research on Electron Trap in SiO_2 Film Nitrided by Plasma
作者:
吕世骥蔡跃明郭耀华
东南大学电子工程系; 东南大学电子工程系 南京通讯工程学院
Author(s):
Lü Shiji Cai Yueming Guo Yaohua (Department of Electronic Engneering)
关键词:
等离子体 电子陷阱 氮化物 电介质膜/二氧化硅
Keywords:
plasmas electron trap nitrides dielectric films/SiO2
分类号:
+
DOI:
10.3969/j.issn.1001-0505.1989.02.004
摘要:
论述了等离子体氮化对SiO_2薄膜中电子陷阱的影响。提出了一种计算电子陷阱能级和陷阱密度的温度修正。实验结果表明:SiO_2薄膜经等离子体氮化后,电子陷阱的密度和俘获截面有所增大,并引入了一个与等离子体氮化缺陷有关的电子陷阱能级。适当地退火可以减少等离子体氮化对SiO_2中电子陷阱的影响。
Abstract:
In this paper the influences of plasma nitridation of SiO_2 films on the electron traps in the films are discussed. A method of correction for temperature is put forward. Experiments show that the density and the cqpture of electron traps in the film are increased after plasma nitridation of SiO_2. At the same time, a new trap level related to the defect emerged in nitridation is introduced. If the annealing is chosen suitably, the influence of nitridation of SiO_2 on electron traps can be reduced.

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更新日期/Last Update: 2013-04-30