[1]李垚,魏同立,沈克强.低温高速双极晶体管基区的优化设计[J].东南大学学报(自然科学版),1995,25(3):34-38.[doi:10.3969/j.issn.1001-0505.1995.03.007]
 Li Yao,Wei Tongli,et al.Optimizing the Base Profile for High-SpeedBipolar Transistore at Low Temperature[J].Journal of Southeast University (Natural Science Edition),1995,25(3):34-38.[doi:10.3969/j.issn.1001-0505.1995.03.007]
点击复制

低温高速双极晶体管基区的优化设计()
分享到:

《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
25
期数:
1995年第3期
页码:
34-38
栏目:
电子科学与工程
出版日期:
1995-05-20

文章信息/Info

Title:
Optimizing the Base Profile for High-SpeedBipolar Transistore at Low Temperature
作者:
李垚魏同立沈克强
东南大学微电子中心
Author(s):
Li Yao; Wei Tongli;Shen Keqiang
Microelectronics Center, Southeast University, Nanjing 210018
关键词:
低温 高速 优化/基区渡越时间 基区电阻
分类号:
TN322.8
DOI:
10.3969/j.issn.1001-0505.1995.03.007
摘要:
本文考虑禁带变窄效应和载流子冻析效应,分析了基区掺杂浓度的分布、基区峰值浓度的大小及位置对基区渡越时间的影响,结合基区电阻的温度模型,对低温高速双极晶体管的优化设计作了探讨。

相似文献/References:

[1]刘卫东,魏同立.MOSFET低温热载流子效应[J].东南大学学报(自然科学版),1994,24(2):15.[doi:10.3969/j.issn.1001-0505.1994.02.003]
 Liu Weidong,Wei Tongli.Low Temperature Hot Carrier Effects in MOSFET’s[J].Journal of Southeast University (Natural Science Edition),1994,24(3):15.[doi:10.3969/j.issn.1001-0505.1994.02.003]
[2]刘卫东,魏同立,李垚.低温CMOS-器件物理和互连特性[J].东南大学学报(自然科学版),1995,25(4):64.[doi:10.3969/j.issn.1001-0505.1995.04.012]
 Liu Weidong,Wei,Tongli,et al.Low-Temperature CMOS-Device Physics and Interconnection Properties[J].Journal of Southeast University (Natural Science Edition),1995,25(3):64.[doi:10.3969/j.issn.1001-0505.1995.04.012]
[3]方峰,蒋建清,马驰.硫酸羟胺对低温磷化过程的影响[J].东南大学学报(自然科学版),2007,37(3):470.[doi:10.3969/j.issn.1001-0505.2007.03.023]
 Fang Feng,Jiang Jianqing,Ma Chi.Effect of hydroxylamine sulfate accelerator on low-temperature phosphating process[J].Journal of Southeast University (Natural Science Edition),2007,37(3):470.[doi:10.3969/j.issn.1001-0505.2007.03.023]
[4]李垚,魏同立.ECL电路传输延迟时间tpd的全温区分析[J].东南大学学报(自然科学版),1996,26(1):1.[doi:10.3969/j.issn.1001-0505.1996.01.001]
 Li Yao,Wei,Tongli.Analysis of Propagation Delay tpd for ECL Circuits in the Whole Range of 77 ̄300K[J].Journal of Southeast University (Natural Science Edition),1996,26(3):1.[doi:10.3969/j.issn.1001-0505.1996.01.001]
[5]曹俊诚,魏同立.77KMOS器件计算机模拟及软件实现[J].东南大学学报(自然科学版),1994,24(5):42.[doi:10.3969/j.issn.1001-0505.1994.05.008]
 Cao Juncheng,Wei Tongli.Simulation and Softwae for MOSFET at 77K[J].Journal of Southeast University (Natural Science Edition),1994,24(3):42.[doi:10.3969/j.issn.1001-0505.1994.05.008]

备注/Memo

备注/Memo:
国家自然科学基金
更新日期/Last Update: 2013-04-15