[1]王明网,魏同立,肖志雄,等.77K下硅中杂质电离率的计算[J].东南大学学报(自然科学版),1995,25(6):57-61.[doi:10.3969/j.issn.1001-0505.1995.06.011]
 Wang Mingwang,Wei Tongli,et al.Computation of Ionization Rate of Impurities at Low Temperature in Si[J].Journal of Southeast University (Natural Science Edition),1995,25(6):57-61.[doi:10.3969/j.issn.1001-0505.1995.06.011]
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77K下硅中杂质电离率的计算()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
25
期数:
1995年第6期
页码:
57-61
栏目:
电子科学与工程
出版日期:
1995-11-20

文章信息/Info

Title:
Computation of Ionization Rate of Impurities at Low Temperature in Si
作者:
王明网魏同立肖志雄
东南大学微电子中心
Author(s):
Wang Mingwang; Wei Tongli; Xiao Zhixiong; Li Yao
Microelectrohics Center,Southeast University,Nanjing 210018
关键词:
模拟 低温
分类号:
TN304.01
DOI:
10.3969/j.issn.1001-0505.1995.06.011
摘要:
用纯数值技术计算了77K硅中杂质的电离率,考虑了Fermi-Dirac统计、禁带变窄效应、冻析效应以及温度对各种物理参数的影响,计算结果比简化模型精确,而且可插入到半导体器件模拟软件中。

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备注/Memo

备注/Memo:
国家自然科学基金
更新日期/Last Update: 2013-04-19