# [1]赵平,魏同立,吴金.深亚微米器件Monte Carlo模拟的数学模型[J].东南大学学报(自然科学版),1999,29(1):8-13.[doi:10.3969/j.issn.1001-0505.1999.01.002] 　Zhao Ping,Wei Tongli,Wu Jin.Mathematical Model on Monte Carlo Simulation for Deep Submicrometer Device[J].Journal of Southeast University (Natural Science Edition),1999,29(1):8-13.[doi:10.3969/j.issn.1001-0505.1999.01.002] 点击复制 深亚微米器件Monte Carlo模拟的数学模型() 分享到： var jiathis_config = { data_track_clickback: true };

29

1999年第1期

8-13

1999-01-20

## 文章信息/Info

Title:
Mathematical Model on Monte Carlo Simulation for Deep Submicrometer Device

Author(s):
Microelectronics Center, Southeast University, Nanjing 210096

Keywords:

TN302
DOI:
10.3969/j.issn.1001-0505.1999.01.002

Abstract:
We discuss Monte Carlo method (MCM) for semiconductor device simulation,and describe the relations among Boltzmann transport model (BTM), drift diffusion model (DDM) and hydrodynamic model (HDM).

## 参考文献/References:

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