# [1]那斯尔江·吐尔逊吴金杨廉峰刘其贵夏君魏同立.半导体器件流体动力学模型研究[J].东南大学学报(自然科学版),1999,29(5):52-56.[doi:10.3969/j.issn.1001-0505.1999.05.010] 　Nasirjan Tursun,Wu Jin,Yang Lianfeng,et al.Study of Hydrodynamic Model for Semiconductor Devices[J].Journal of Southeast University (Natural Science Edition),1999,29(5):52-56.[doi:10.3969/j.issn.1001-0505.1999.05.010] 点击复制 半导体器件流体动力学模型研究() 分享到： var jiathis_config = { data_track_clickback: true };

29

1999年第5期

52-56

1999-09-20

## 文章信息/Info

Title:
Study of Hydrodynamic Model for Semiconductor Devices

Author(s):
Microelectronics Center, Southeast University, Nanjing 210096

Keywords:

TN302
DOI:
10.3969/j.issn.1001-0505.1999.05.010

Abstract:
This paper presents the building procedures of hydrodynamic model for submicron semiconductor device simulation. The derivations of this model are based on the moments of Boltzmann transport equation. With different physical assumptions and mathematical approximation, the actual forms of hydrodynamic model are various. This paper also analyzes the relationships between the hydrodynamic models with different forms and gives out the application features of different device transport models. Thus it is advisable to choose the device model for general submicron semiconductor device simulation according the conclusion of this paper. 

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