[1]张海鹏,魏同立,冯耀兰.宽温区体硅MOST阈值电压温度特性的研究[J].东南大学学报(自然科学版),1999,29(6):32-35.[doi:10.3969/j.issn.1001-0505.1999.06.007]
 Zhang Haipeng,Wei Tongli,Feng Yaolan.Temperature Characteristics of Threshold Voltage of Bulk Silicon NMOST Working in Wide-Temperature-Range[J].Journal of Southeast University (Natural Science Edition),1999,29(6):32-35.[doi:10.3969/j.issn.1001-0505.1999.06.007]
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宽温区体硅MOST阈值电压温度特性的研究()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
29
期数:
1999年第6期
页码:
32-35
栏目:
电路与系统
出版日期:
2000-11-20

文章信息/Info

Title:
Temperature Characteristics of Threshold Voltage of Bulk Silicon NMOST Working in Wide-Temperature-Range
作者:
张海鹏 魏同立 冯耀兰
东南大学微电子中心,南京 210096
Author(s):
Zhang Haipeng Wei Tongli Feng Yaolan
Microelectronic Center, Southeast University, Nanjing 210096
关键词:
MOST 阈值电压 温度特性 模型
Keywords:
MOST threshold voltage temperature characteristics model
分类号:
TN402
DOI:
10.3969/j.issn.1001-0505.1999.06.007
摘要:
本文在深入研究硅费米势和禁带宽度温度特性的基础上,详细探讨了宽温区体硅NMOST阈值电压的温度特性及沟道掺杂浓度与栅氧化层厚度对其温度特性的影响,提出了298~523 K宽温区体硅NMOST阈值电压的γ-σ因子温度非线性简化模型.该模型的模拟结果与高温MOS器件模拟软件HTMOS的数值模拟结果吻合得很好.
Abstract:
The temperature characteristics of threshold voltage of bulk silicon NMOST working in wide-temperature-range are carefully discussed based on dipping into the temperature characteristics of silicon Fermi potential and band gap. The influences of the channel doping concentration and the thickness of gate oxide are analyzed. Then a new nonlinear simplified model of the temperature characteristics of threshold voltage of bulk silicon NMOST working in wide-temperature-range in terms of two factors γ and σ is proposed. The simulation results of this model coincide with the numerical simulation results of HTMOS (High-Temperature MOS device simulation software).

参考文献/References:

[1] Sze S M.Physics of semiconductor devices.2nd Edition.New York:John Wiley & Sons,1981.373,442
[2] 施敏.半导体器件物理与工艺.王阳元,嵇大光,卢文豪等译.北京:科学出版社,1992.13
[3] Shoucair F,Hwang W,Jain P.Electrical characteristics of large scale integration (LSI) MOSFETs at very high temperatures.Microelectron Reliab,1984,24(3):465~485
[4] 柯导明.高温MOS晶体管和集成电路的研究:[学位论文].南京:东南大学电子工程系,1992

相似文献/References:

[1]魏同立,何野.用于SPICEⅡ程序的耗尽型MOS器件模型[J].东南大学学报(自然科学版),1986,16(5):54.[doi:10.3969/j.issn.1001-0505.1986.05.007]
 Wei Tongli,Ho Yie.A Depletion Mode MOSFET Model for SPICE Ⅱ Program[J].Journal of Southeast University (Natural Science Edition),1986,16(6):54.[doi:10.3969/j.issn.1001-0505.1986.05.007]
[2]闵光伟,陆祖宏,韦钰.扫描隧道显微镜纳米加工技术的研究[J].东南大学学报(自然科学版),1994,24(5):141.[doi:10.3969/j.issn.1001-0505.1994.05.028]
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备注/Memo

备注/Memo:
基金项目:国家自然科学基金重点项目(69736020).
第一作者:男,1973年,博士研究生.
更新日期/Last Update: 1999-11-20