[1]黄蕙芬.具有优良绝缘性能的Ta2O5介质膜[J].东南大学学报(自然科学版),1999,29(6):36-39.[doi:10.3969/j.issn.1001-0505.1999.06.008]
 Huang Huifen.Ta2O5 Dielectric Films with Excellent Insulating Properties[J].Journal of Southeast University (Natural Science Edition),1999,29(6):36-39.[doi:10.3969/j.issn.1001-0505.1999.06.008]
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具有优良绝缘性能的Ta2O5介质膜()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
29
期数:
1999年第6期
页码:
36-39
栏目:
材料科学与工程
出版日期:
2000-11-20

文章信息/Info

Title:
Ta2O5 Dielectric Films with Excellent Insulating Properties
作者:
黄蕙芬
东南大学电子工程系,南京 210096
Author(s):
Huang Huifen
Department of electronic engineering, Southeast university,Nanjing 210096
关键词:
绝缘特性 Ta2O5介质膜 溅射/阳极氧化二步法 漏电流 击穿场强
Keywords:
insulating properties Ta2O5 dielectric films sputtering/anodization two-step process leakage current breakdown field strength
分类号:
TB383
DOI:
10.3969/j.issn.1001-0505.1999.06.008
摘要:
介绍了一种具有优良绝缘性能的Ta2O5介质膜,它由溅射/阳极氧化二步法工艺制备而成.用原子力显微镜(AFM)对Ta2O5膜进行了表面形貌分析,对它的电特性进行了测试,并与溅射Ta2O5膜和阳极氧化Ta2O5膜进行了比较.结果表明:溅射/阳极氧化Ta2O5膜的漏电流比溅射Ta2O5膜和阳极氧化Ta2O5膜分别减少了3~4和1~2个数量级,击穿场强也远高于后2种膜.
Abstract:
The Ta2O5 dielectric films with excellent insulating properties were introduced in this paper. The films were formed by anodizing sputtered tantalum oxide films (sputtering/anodization two-step process). The surface morphologies of tantalum oxide films were analyzed by AFM (Atomic Force Microscopy). The leakage current was also measured. The surface morphologies and the leakage current of this two-step oxidized sputtered/anodized Ta2O5 dielectric films were compared with those of the usual Ta2O5 films prepared by either anodization or sputtering only. The results showed that the leakage current of sputtered/anodized Ta2O5 dielectric films was 3-4 and 1-2 order less than that of sputtering Ta2O5 dielectric films and anodization Ta2O5 dielectric films respectively, and the breakdown field strength was also fast higher than that of the Ta2O5 films by other methods.

参考文献/References:

[1] Byeon S G,Tzeng Y.High performance sputtered/anodized tantalum oxide capacitors.IEEE IEDM,88.1988.722~725
[2] Reddy P K,Jawalekar S R.Improved properties of TaN-Ta2O5Nx-Al capacitors.Thin Solid Films,1979,64:71~76
[3] 黄蕙芬.Ta2O5介质膜和Ta2O5-SiO双层介质膜绝缘特性的实验研究.真空电子技术,1993(3):40~42
[4] 曲喜新,杨邦朝,姜节俭,等.电子薄膜材料.北京:科学出版社,1997.204~209

备注/Memo

备注/Memo:
基金项目: 江苏省应用基础资助项目(BJ97016).
第一作者:女,1944年生,硕士,副教授.
更新日期/Last Update: 1999-11-20