[1]王蓉,王志功,柯锡明,等.InAlAs/InGaAs HEMT跨阻前置放大器的设计与实现[J].东南大学学报(自然科学版),2002,32(1):46-49.[doi:10.3969/j.issn.1001-0505.2002.01.011]
 Wang Rong,Wang Zhigong,Ke Ximing,et al.Design and realization of an InAlAs/InGaAs HEMT transimpedance amplifiers[J].Journal of Southeast University (Natural Science Edition),2002,32(1):46-49.[doi:10.3969/j.issn.1001-0505.2002.01.011]
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InAlAs/InGaAs HEMT跨阻前置放大器的设计与实现()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
32
期数:
2002年第1期
页码:
46-49
栏目:
电子科学与工程
出版日期:
2002-01-20

文章信息/Info

Title:
Design and realization of an InAlAs/InGaAs HEMT transimpedance amplifiers
作者:
王蓉1 王志功1 柯锡明1 敖金平2 李献杰2 刘伟吉2
1 东南大学射频与光电集成电路研究所,南京 210096; 2 信息产业部电子13研究所,石家庄 050002
Author(s):
Wang Rong1 Wang Zhigong1 Ke Ximing1 Ao Jinping2 Li Xianjie2 Liu Weiji2
1 Institute of RF-& OE-ICs, Southeast University, Nanjing 210096, China
2 13th Research Institute, Information Industrial Department, Shijiazhuang 050002, China
关键词:
光接收机 前置放大器 InAlAs/InGaAs HEMT工艺
Keywords:
optical receiver preamplifier InAlAs/InGaAs HEMT technology
分类号:
TN722.7
DOI:
10.3969/j.issn.1001-0505.2002.01.011
摘要:
提出了基于耗尽型InAlAs/InGaAs HEMT器件的光纤通信接收机中的单电源跨阻前置放大器电路,并给出了设计方法与实验结果.该前置放大器采用单电源供电,单端输入,双端差动输出,由两级源级跟随器,一级输出级以及一个反馈电阻组成.当前置放大器工作在2.5 Gbit/s时,跨阻可达62.5 dBΩ.采用+5 V电源供电,功耗为272 mW.
Abstract:
This paper presents a depletion InAlAs/InGaAs HEMT-based single supply transimpedance amplifier circuit for optical communication receiver. It is composed of an amplifier stage, two stages of source follower, an output stage and a feedback resistance. The schemes of single supply voltage, single-ended input and differential output are adopted in the circuit. While operating at 2.5 Gbit/s, the preamplifier shows a transimpedance of 62.5 dBΩ. The chip consumes 272 mW at a single +5 V supply voltage.

参考文献/References:

[1] Chien Feng-Tso,Chan Yi-Jen.Bandwidth enhancement of transimpedance amplifier by a capacitive-peaking design [J].IEEE J Solid-State Circuits, 1999,34:1167-1170.
[2] 王志功.光纤通信系统超高速集成电路设计[J].中国科学基金,2000,14(3):161-166.
  Wang Zhigong.Ultra-high speed IC design for optical communication system[J].China Science Fund,2000,14(3):161-166.(in Chinese)
[3] Scheinberg Norman,Bayruns Robert J,Laverick Timothy M.Monolichic GaAs transimpedance amplifiers for fiber-optic Receivers[J].IEEE J Solid-State Circuits, 1991,26:1834-1839.
[4] 陶蕤.王志功.SDH系统STM-16速率级CMOS限幅放大器 [J].光电子、激光,2000,11(2):120-122.
  Tao Rui,Wang Zhigong.STM-16 CMOS limiting amplifier for SDH system[J].Photoelectron Laser,2000,11(2):120-122.(in Chinese)
[5] 敖金平.单片集成长波长光接收机和InAlAs/InGaAs增强型高电子迁移率晶体管研究[D].长春:吉林大学集成光电子国家重点实验室,2000.53-54.
  Ao Jinping.Study on monolithically integrated long-wavelength photoreceivers and InAlAs/InGaAs enhancement-mode high electron mobility transistors [D].Changchun:State Key Lab of Integrated Optoelectronics,Jilin University,2000.53-54.(in Chinese)

相似文献/References:

[1]王晓明,王志功,黄頲,等.甚短距离光传输技术[J].东南大学学报(自然科学版),2003,33(3):257.[doi:10.3969/j.issn.1001-0505.2003.03.003]
 Wang Xiaoming,Wang Zhigong,Huang Ting,et al.Very short reach optical transmission technology[J].Journal of Southeast University (Natural Science Edition),2003,33(1):257.[doi:10.3969/j.issn.1001-0505.2003.03.003]

备注/Memo

备注/Memo:
基金项目: 国家863计划资助项目(863-307-15-3-05).
作者简介: 王蓉(1976—),女,硕士,助教,wangrong@seu.edu.cn;
王志功,男,博士,教授,博士生导师,zgwang@seu.edu.cn.
更新日期/Last Update: 2002-01-20