[1]秦明,黄庆安.基于横向多晶硅二极管的CMOS兼容热风速计[J].东南大学学报(自然科学版),2002,32(4):569-571.[doi:10.3969/j.issn.1001-0505.2002.04.006]
 Qin Ming,Huang Qingan.CMOS compatible thermal anemometer based on laterally polysilicon diodes[J].Journal of Southeast University (Natural Science Edition),2002,32(4):569-571.[doi:10.3969/j.issn.1001-0505.2002.04.006]
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基于横向多晶硅二极管的CMOS兼容热风速计()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
32
期数:
2002年第4期
页码:
569-571
栏目:
电子科学与工程
出版日期:
2002-07-20

文章信息/Info

Title:
CMOS compatible thermal anemometer based on laterally polysilicon diodes
作者:
秦明 黄庆安
东南大学微电子机械系统教育部重点实验室, 南京 210096
Author(s):
Qin Ming Huang Qingan
Education Ministry Laboratory of Micro-Elcetro-Mechanical Systems, Southeast University, Nanjing 210096, China
关键词:
横向多晶硅二极管 风速计 风速 风向
Keywords:
laterally polysilicon diode anemometer wind flow wind direction
分类号:
TN379
DOI:
10.3969/j.issn.1001-0505.2002.04.006
摘要:
提出并试制了一种采用多晶硅横向二极管作为测温元件的CMOS兼容热风速计.该风速计的加热元件和测温元件均采用多晶硅技术制造,工艺与CMOS兼容.对横向多晶硅二极管的温度敏感特性调查发现,其正向电流随温度增加几乎呈线性增加,显示该多晶硅二极管具有负的电压温度系数.其值约为-1.8 mV/K,非常接近单晶硅上PN结的电压温度系数-2 mV/K.采用CMOS工艺试制了由8个横向多晶硅二极管组成的风速计结构,并实验测量了其风速和风向敏感特性.
Abstract:
A new micromachined thermal anemometer based on laterally polysilicon diode(LPD)has been developed. The LPD and temperature sensing elements are fabricated with polysilicon, and the process is compatible with CMOS. The temperature-sensing characterization was investigated. The measured results show that the forward current increases with temperature almost linearly, which means that the LPD has negative bias temperature coefficient. The bias temperature coefficient is about -1.8 mV/K, which is quite close to that of crystalline silicon diode -2 mV/K. Furthermore, an anemometer with a ring-like polysilicon heater and 8 LPD temperature-sensing and wind elements was fabricated by CMOS process and its wind rate and wind direction sensing characteristics were measured.

参考文献/References:

[1] Moser D,Lenggenhager R,Baltes H.Silicon gas flow sensor using industrial CMOS and bipolar IC technology [J].Sensors and Actuators A, 1991,27:577-581.
[2] Neda T,Nakamura K,Takumi T.A polysilicon flow sensor for gas flowmeters [A].In: Transducers’95,the 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX[C].Stockholm,Sweden,1995,25-29:548-551.
[3] Oudheusden W B,Huijsing J H.An electronic wind meter based on a silicon flow sensor [J]. Sensors and Actuators,1990,22:420-424.
[4] Mayer F,Haberli A,Jacobs H,et al.Single-chip CMOS anemometer [A].In:International Electron Devices Meeting,IEDM Technical Digest[C].New York,USA,1997.895-898.
[5] Meijer G C.Thermal sensors based on transistors [J].Sensors and Actuators,1986,10:103-125.

备注/Memo

备注/Memo:
基金项目: 江苏省高新技术资助项目(BG2001035).
作者简介: 秦明(1967—),男,博士,副教授,mqin@seu.edu.cn; 黄庆安(联系人),男,博士,教授,博士生导师,hqa@seu.edu.cn.
更新日期/Last Update: 2002-07-20