[1]吴建辉,孙伟锋,陆生礼.PDP选址驱动芯片高压管设计[J].东南大学学报(自然科学版),2003,33(2):134-137.[doi:10.3969/j.issn.1001-0505.2003.02.004]
 Wu Jianhui,Sun Weifeng,Lu Shengli.Design of high-voltage transistor for PDP data driver[J].Journal of Southeast University (Natural Science Edition),2003,33(2):134-137.[doi:10.3969/j.issn.1001-0505.2003.02.004]
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PDP选址驱动芯片高压管设计()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
33
期数:
2003年第2期
页码:
134-137
栏目:
电子科学与工程
出版日期:
2003-03-20

文章信息/Info

Title:
Design of high-voltage transistor for PDP data driver
作者:
吴建辉 孙伟锋 陆生礼
东南大学ASIC工程技术研究中心,南京 210096
Author(s):
Wu Jianhui Sun Weifeng Lu Shengli
National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China
关键词:
等离子体平板显示 击穿 高压管 版图
Keywords:
plasma display panel breakthrough high voltage transistor layout
分类号:
TN710;TN432
DOI:
10.3969/j.issn.1001-0505.2003.02.004
摘要:
PDP选址驱动芯片实现低压控制高压输出,其中高压管的设计是关键,文中提出了能与低压CMOS工艺相兼容的高压管HV-CMOS结构及其中的高低压转换电路,采用TSUPREM-4与MEDICI软件对其击穿特性进行了相应的模拟分析; 通过对已流水的芯片中的高压管进行分析验证看出该结构击穿电压大于80 V,工作电流大于40 mA.
Abstract:
PDP data driver accomplishes high voltage output controlled by low voltage signal, in the chip the key is the design of the high-voltage transistor. A high voltage CMOS(HV-CMOS)being compatible with CMOS process and the convert circuit of voltage have been designed. The characteristic about the HV-CMOS breakdown is analyzed by simulating with TSUPREM-4 and MEDICI. The analysis of the HV-CMOS in the approached chip has been done and it shows that the breakdown voltage of the designed HV transistor is higher than 80 V and the current is more than 40 mA.

参考文献/References:

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[2] 谢世健.集成电路兼容技术[M].南京:东南大学出版社,1994.109-111.
[3] Tae Moon Roh,Dae Woo Lee,Joagdae Kim,et al.High voltage SOI power IC technology with non-RESURF n-LDMOSFET and RESURF p-LDMOSFET for PDP scan-driver applications[J].Journal of the Korean Physical Society, 2000,37(6):889-892.
[4] Lee M R,Oh-Kyong kwon,Lee S S,et al.SOI high voltage integrated circuit technology for plasma display panel drivers[A].In: The 11th International Symposium on Power Semiconductor Devices and ICs [C].1999.285-288.
[5] Nezar A,Salama C A T.Breakdown voltage in LDMOS transistors using internal field rings [J].IEEE Trans Electron Devices,1991,38(7):1 676-1 680.

备注/Memo

备注/Memo:
作者简介: 吴建辉(1966—),男,博士,副教授,wjh@seu.edu.cn.
更新日期/Last Update: 2003-03-20