[1]彭龙新,李建平,蒋幼泉,等.S波段单片低噪声放大器[J].东南大学学报(自然科学版),2004,34(1):5-9.[doi:10.3969/j.issn.1001-0505.2004.01.002]
 Peng Longxin,Li Jianping,et al.S-band MMIC low noise amplifier[J].Journal of Southeast University (Natural Science Edition),2004,34(1):5-9.[doi:10.3969/j.issn.1001-0505.2004.01.002]
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S波段单片低噪声放大器()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
34
期数:
2004年第1期
页码:
5-9
栏目:
电子科学与工程
出版日期:
2004-01-20

文章信息/Info

Title:
S-band MMIC low noise amplifier
作者:
彭龙新12 李建平2 蒋幼泉2 魏同立1
1 东南大学微电子中心, 南京 210096; 2 南京电子器件研究所, 南京 210016
Author(s):
Peng Longxin1 2 Li Jianping2 Jiang Youquan2 Wei Tongli1
1 Microelectronic Center, Southeast University, Nanjing 210096, China
2 Nanjing Electronics Devices Institute, Nanjing 210016, China
关键词:
赝配高电子迁移率晶体管 微波单片集成电路 单片低噪声放大器 静电
Keywords:
pseudomophic high electron mobility transistor microwave monolithic integrated circuit low noise amplifier electrostatic discharge
分类号:
TN722.3
DOI:
10.3969/j.issn.1001-0505.2004.01.002
摘要:
S波段单片低噪声放大器采用了0.5 μm 3英寸(76.2 mm)砷化镓赝配高电子迁移率晶体管工艺,由三级自偏电路构成,单电源(+5 V)供电.对3英寸圆片上的放大器芯片进行直流测试后,随机抽取一定数量的样品装架测量, 并对放大器进行了增益和相位的统计.统计表明:在S波段带宽300 MHz范围内, 增益在24.5~26 dB范围内, 相位线性度小于1°,相位偏差±7°, 噪声系数最大1.4 dB, 输入输出驻波最大1.4, 1 dB压缩输出功率大于10.5 dBm. 另外,还对放大器进行了高温、低温环境试验和静电模拟和试验.
Abstract:
The S-band microwave monolithic integrated circuit(MMIC)low noise amplifier(LNA), which were composed of three self-biased stages, were designed and fabricated by 0.5 μm GaAs pseudomophic high electron mobility transistor(PHEMT)process technology. It is supplied by a single DC power(+5 V). After the DC test of the amplifier chips, we arbitrarily got some quantity of these chips from the 3 inch wafers to be packaged and measured, then made some gain and phase statistics for these amplifiers. We demonstrated that within 300 MHz bandwidth of S band, the gains of these LNAs are between 24.5 dB and 26 dB, the phase linearity less than 1°, phase consistence ±7°, the noise less than 1.4 dB, voltage standing wave ratio(VSWRs)less than 1.4, and output power P1dB more than 10.5 dBm. We also studied their temperature features, simulated and experimented with their ability against electrostatic discharge.

参考文献/References:

[1] 彭龙新,林金庭,魏同立.X波段单片集成低噪声子系统[J].固体电子学研究与进展,2002,22(2):141-145.
  Peng Longxin,Lin Jinting,Wei Tongli.X-band monolithic low noise subsystem [J]. Research & Progress of Solid State Electronics,2002,22(2):141-145.(in Chinese)
[2] 彭龙新,蒋幼泉,林金庭,等.1~7 GHz全单片低噪声放大器[J].固体电子学研究与进展,2003,23(3):296-300.
  Peng Longxin,Jiang Youquan,Lin Jinting,et al.1-7 GHz monolithic integrated low noise amplifier [J]. Research & Progress of Solid State Electronics,2003,23(3):296-300.(in Chinese)
[3] Niclas I B,Wilser W T,Gold R B,et al.The matched feedback amplifier — ultrawide-band microwave amplification with GaAs MESFETs [J]. IEEE Trans on Microwave Theory and Technology,1980,28(4):285-299.
[4] Voldman Steven H.The state of the art of electrostatic discharge protection:physics,technology,circuits,design,simulation,and scaling [J].IEEE Journal of Solid-State Circuits,1999,34(9):1272-1282.
[5] Wu Chungyu,Ker Mingdou.A new on-chip ESD protection circuit with dual parasitic SCR structures for CMOS VLSI [J].IEEE Journal of Solid-State Circuits, 1992,27(3):274-231.

相似文献/References:

[1]李嗣范,何立权.微波单片集成电路的发展动态[J].东南大学学报(自然科学版),1988,18(6):109.[doi:10.3969/j.issn.1001-0505.1988.06.015]
 Li Sifan He Liguan (Department of Radio Engineering).The State of the Art of MMIC[J].Journal of Southeast University (Natural Science Edition),1988,18(1):109.[doi:10.3969/j.issn.1001-0505.1988.06.015]

备注/Memo

备注/Memo:
作者简介: 彭龙新(1962—),男, 博士生, 高级工程师, eleplx@hotmail.com; 魏同立(联系人),男,教授,博士生导师.
更新日期/Last Update: 2004-01-20