[1]黄风义,孔晓明,蒋俊洁,等.砷化镓HBT的VBIC模型研究[J].东南大学学报(自然科学版),2005,35(2):188-191.[doi:10.3969/j.issn.1001-0505.2005.02.005]
 Huang Fengyi,Kong Xiaoming,Jiang Junjie,et al.Investigation of GaAs HBT VBIC model[J].Journal of Southeast University (Natural Science Edition),2005,35(2):188-191.[doi:10.3969/j.issn.1001-0505.2005.02.005]
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砷化镓HBT的VBIC模型研究()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
35
期数:
2005年第2期
页码:
188-191
栏目:
电子科学与工程
出版日期:
2005-03-20

文章信息/Info

Title:
Investigation of GaAs HBT VBIC model
作者:
黄风义1 孔晓明1 蒋俊洁1 姜楠2
1 东南大学射频和光电集成电路研究所, 南京 210096; 2 爱斯泰克(上海)高频通讯技术有限公司, 上海 201203
Author(s):
Huang Fengyi1 Kong Xiaoming1 Jiang Junjie1 Jiang Nan2
1 Institute of RF and OE-ICs, Southeast University, Nanjing 210096, China
2 S-TEK(Shanghai)High-frequency Communication Technology Ltd. Company, Shanghai 201203, China
关键词:
异质结双极晶体管器件 VBIC模型 参数提取
Keywords:
HBT VBIC model parameter extraction
分类号:
TN386
DOI:
10.3969/j.issn.1001-0505.2005.02.005
摘要:
利用国际先进的2 μm InGaP/GaAs HBT工艺加工生产线进行了晶体管芯片的加工,并在器件测试的基础上开展了模型参数的提取.所研究的模型主要是针对异质结双极晶体管器件HBT特别是砷化镓异质结双极晶体管器件,在对常用的几种器件模型,如EM模型、GP模型和VBIC模型的特点做比较的基础上,详细介绍了一种基于IC-CAP系统的准确提取VBIC模型的方法.利用提取的VBIC模型对所制备器件进行了模拟仿真,仿真结果与测试结果相比较二者可以很好吻合至20 GHz.
Abstract:
This article compares the characteristics of GP(Gummel-Poon)model and VBIC(vertical bipolar Inter-company)model for hetero-junction bipolar transistors(HBT), especially for InGaP/GaAs HBT. The procedures for extraction of VBIC model parameters based on the IC-CAP system are also introduced. The HBT chip was manufactured in an advanced 2 μm InGaP/GaAs HBT foundry in overseas. The HBT devices were measured and the VBIC model parameters were extracted from the measurement data. The simulation results using the VBIC model fit the measurement data well up to 20 GHz.

参考文献/References:

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备注/Memo

备注/Memo:
基金项目: 国家自然科学基金资助项目(604760)、江苏省自然科学基金资助项目(BK2004066).
作者简介: 黄风义(1964—),男,博士,教授,长江学者,博士生导师,fyhuang@seu.edu.cn.
更新日期/Last Update: 2005-03-20