[1]王伟,孙建平,顾宁.纳米双栅MOSFETs的量子格林函数模拟[J].东南大学学报(自然科学版),2006,36(6):917-919.[doi:10.3969/j.issn.1001-0505.2006.06.009]
 Wang Wei,Sun Jianping,Gu Ning.Quantum modeling for nanoscale double gate MOSFETs based on Green’s function[J].Journal of Southeast University (Natural Science Edition),2006,36(6):917-919.[doi:10.3969/j.issn.1001-0505.2006.06.009]
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纳米双栅MOSFETs的量子格林函数模拟()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
36
期数:
2006年第6期
页码:
917-919
栏目:
生物医学工程
出版日期:
2006-11-20

文章信息/Info

Title:
Quantum modeling for nanoscale double gate MOSFETs based on Green’s function
作者:
王伟13 孙建平2 顾宁1
1 东南大学生物电子学国家重点实验室,江苏省生物材料与器件重点实验室, 南京 210096; 2 美国密西根大学电气工程和计算机科学系, 安娜堡; 3 南京邮电大学光电工程学院, 南京 210003
Author(s):
Wang Wei13 Sun Jianping2 Gu Ning1
1 State Key Laboratory of Bioelectronics, Jiangsu Laboratory for Biomaterials and Devices, Southeast University, Nanjing 210096, China
2 Department of Electrical Engineering and Computer Science, The University of Michigan, Ann A
关键词:
非平衡格林函数 双栅MOS 量子模型
Keywords:
NEGF(non-equilibrium Green’s functions) double gate MOS quantum model
分类号:
TP4
DOI:
10.3969/j.issn.1001-0505.2006.06.009
摘要:
采用一种量子动力学模型研究纳米 MOSFET(场效应管)电流特性.该模型基于二维 NEGF(非平衡格林函数)方程和 Poisson 方程自洽全量子数值解.使用该方法研究了纳米双栅 MOSFET 结构尺寸对电流特性的影响.模拟结果显示: 越细长的沟道,器件的短沟效应越弱, 器件的亚阈值斜率随栅氧化层增厚而加大.另外,通过分析器件不同区域的散射自能效应,得出减缓纳米双栅 MOSFET 电流性能下降的途径.所用模型具有概念清晰,求解稳定等特点.作为多体量子模型,本方法可应用于一维量子线及量子点阵列所构成的纳米器件,并有望在纳米 MOSFET 器件设计中得以应用.
Abstract:
A quantum kinetic model based on two-dimensional(2D)non-equilibrium Green’s functions(NEGF)solved self-consistently with Poisson’s equations is developed to investigate the device behavior of nanoscale double-gate MOSFETs(metal-oxide-semiconductor field effect transistor). The influence of device dimensions on current characteristics has been studied. The simulated results indicate that thinner and longer channel can reduce short channel effects, while thicker gate oxide will lead to higher subthreshold slopes. In addition, scattering effects on the channel current degradation are evaluated using self-energies and approaches for improvement are indicated. The present model has the features of being conceptually simple and computationally stable, and is suitable for modeling various nanoscale devices including device structures consisting of quantum wires and quantum dot arrays, as well as the design of nanoscale MOSFETs.

参考文献/References:

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[2] Vinet M,Poiroux T,Widiez J,et al.Bonded planar double-metal gate NMOS transistors down to 10 nm[J]. IEEE Electron Device Lett,2005,26(5):317-319.
[3] Iwata H,Matsuda T,Ohzone T.Influence of image and exchange-correlation effects on electron transport in nanoscale DG MOSFETs[J]. IEEE Trans Electron Devices, 2005,52(7):1596-1601.
[4] Shao X,Yu Z P.Nanoscale FinFET simulation:a quasi-3D quantum mechanical model using NEGF[J].Solid-State Electronics,2005,49(8):1435-1445.
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备注/Memo

备注/Memo:
基金项目: 国家自然科学基金资助项目(60371037, 20573019,90406023, 90406024).
作者简介: 王伟(1964—),男, 博士生; 顾宁(联系人),男,博士,教授,博士生导师, guning@seu.edu.cn.
更新日期/Last Update: 2006-11-20