[1]杨卫平,徐家文,吴勇波.超声椭圆振动-化学机械复合抛光硅片实验研究[J].东南大学学报(自然科学版),2008,38(5):912-917.[doi:10.3969/j.issn.1001-0505.2008.05.033]
 Yang Weiping,Xu Jiawen,Wu Yongbo.Experimental investigation of silicon wafer hybrid polishing by UEV-CMP[J].Journal of Southeast University (Natural Science Edition),2008,38(5):912-917.[doi:10.3969/j.issn.1001-0505.2008.05.033]
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超声椭圆振动-化学机械复合抛光硅片实验研究()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
38
期数:
2008年第5期
页码:
912-917
栏目:
机械工程
出版日期:
2008-09-20

文章信息/Info

Title:
Experimental investigation of silicon wafer hybrid polishing by UEV-CMP
作者:
杨卫平12 徐家文1 吴勇波3
1 南京航空航天大学江苏省精密与微细制造技术重点实验室,南京 210016; 2 江西农业大学工学院,南昌 330045; 3 日本秋田县立大学机械智能系统工程系,秋田 015-0055
Author(s):
Yang Weiping12 Xu Jiawen1 Wu Yongbo3
1 Jiangsu Key Laboratory of Precision and Micro-Manufacturing Technology,Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
2 College of Engineering, Jiangxi Agricultural University, Nanchang 330045, China
关键词:
超声椭圆振动 化学机械抛光 复合 表面形貌 材料去除率
Keywords:
UEV(ultrasonic elliptic vibration) CMP(chemical mechanical polishing) hybrid surface morphology MRR(material remove rate)
分类号:
TH16
DOI:
10.3969/j.issn.1001-0505.2008.05.033
摘要:
在研制超声椭圆振动-化学机械复合抛光硅片实验装置基础上,进一步开展了抛光压力P,抛光点速度v及抛光液供给量Q等可控工艺参数对硅片抛光表面粗糙度、表面形貌和材料去除率影响的有无超声椭圆振动辅助抛光的对比实验研究.实验结果表明:抛光工具的超声椭圆振动有利于抛光垫保持良好的表面形貌和抛光区获得良好的工作状况,提高硅片材料的去除率; 抛光压力对抛光质量的影响最大,抛光速度次之,抛光液供给量影响最小; 在最佳抛光效果情况下,可使硅片抛光表面粗糙度值由传统抛光法所获得的Ra0.077 μm降到超声辅助抛光法的Ra0.042 μm,材料去除率最多可提高18%,并且工件表面形貌有明显改善.
Abstract:
Based on a developed UEV(ultrasonic elliptic vibration)-CMP(chemical mechanical polishing)hybrid polishing system used for silicon wafer, the experimental investigation of the effect of controllable process parameters(i.e., polishing pressure P, slurry supplying Q, wafer velocity at polishing point v)on the process outputs(i.e., polishing surface roughness, surface morphology, material remove rate(MRR))were performed with or without using ultrasonic assisted polishing(UAP). Experimental results show that ultrasonic elliptic vibration of polishing tool can maintain better surface morphology of polishing pad, obtain favorable work condition for wafer polishing, and increase MRR. The effect of polishing pressure on the quality of wafer polishing surface is the biggest, followed by polishing speed, and the effect of slurry supplying is the smallest. At the best result of polishing condition, wafer surface roughness is decreased from conventional Ra 0.077 μm to UAP Ra 0.042 μm, the MRR is increased up to 18% by UAP, and the wafer surface morphology is also greatly improved by UAP.

参考文献/References:

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备注/Memo

备注/Memo:
作者简介: 杨卫平(1963—),男,博士生; 徐家文(联系人),男,教授,博士生导师,xjw502@nuaa.edu.cn.
基金项目: 日本秋田县新规事业开发支援基金资助项目(A-2006235).
引文格式: 杨卫平,徐家文,吴勇波.超声椭圆振动-化学机械复合抛光硅片实验研究[J].东南大学学报:自然科学版,2008,38(5):912-917.
更新日期/Last Update: 2008-09-20