[1]张孝青,陈立立,何光旭,等.LCMO,LSMO单、双层薄膜的制备和电学性质[J].东南大学学报(自然科学版),2010,40(1):218-222.[doi:10.3969/j.issn.1001-0505.2010.01.041]
 Zhang Xiaoqing,Chen Lili,He Guangxu,et al.Preparation and electric properties of single and double thin film of LCMO and LSMO[J].Journal of Southeast University (Natural Science Edition),2010,40(1):218-222.[doi:10.3969/j.issn.1001-0505.2010.01.041]
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LCMO,LSMO单、双层薄膜的制备和电学性质()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
40
期数:
2010年第1期
页码:
218-222
栏目:
数学、物理学、力学
出版日期:
2010-01-20

文章信息/Info

Title:
Preparation and electric properties of single and double thin film of LCMO and LSMO
作者:
张孝青 陈立立 何光旭 朱明
东南大学物理系, 南京 210096
Author(s):
Zhang Xiaoqing Chen Lili He Guangxu Zhu Ming
Department of Physics, Southeast University, Nanjing 210096,China
关键词:
脉冲激光沉积法 异质结 整流
Keywords:
pulsed laser deposition heterojunction rectification property
分类号:
O469
DOI:
10.3969/j.issn.1001-0505.2010.01.041
摘要:
采用脉冲激光沉积法在Si衬底上沉积La1-xCaxMnO3,La1-xSrxMnO3(x=0.2,0.5,0.8)单钙钛矿锰氧化物单层膜和双层膜.采用LCR仪等分析测试手段研究了薄膜异质结的电流-电压特性.I-V特性曲线表明:单钙钛矿La1-xCaxMnO3/Si和La1-xSrxMnO3/Si均表现出了与传统p-n结相似的整流特性,但是La1-xCaxMnO3/Si的整流特性要明显优于La1-xSrxMnO3/Si,这可能是因为La1-xCaxMnO3同衬底晶格常数更为匹配且Sr掺杂引起的晶格畸变场势阱更深的缘故.在双层膜结构中可能是由于能带结构的原因,按La1-xSrxMnO3/La1-xCaxMnO3/Si顺序排列的异质结相当于p+-p-n结构, I-V特性明显类似传统的整流特性,而La1-xCaxMnO3/La1-xSrxMnO3/Si顺序的异质结相当于n-p-n型,整流特性不明显.
Abstract:
La1-xCaxMnO3,La1-xSrxMnO3 single and double thin films are prepared by pulsed laser deposition(PLD)on the Si(100)substrate. The transport properties of the heterojunction were studied by the LCR meter. The I-V curves suggest that rectification property of La1-xCaxMnO3/Si and La1-xSrxMnO3/Si heterojunctions is similar to traditional semiconductor p-n junction. However La1-xCaxMnO3/Si is obviously superior to La1-xSrxMnO3/Si probably due to its smaller crystal lattice mismatch with Si substrate and weaker ability to local carriers in films. In the double film heterojunction, La1-xSrxMnO3/La1-xCaxMnO3/Si has a good rectification characteristic because of its p+-p-n structure while La1-xCaxMnO3/La1-xSrxMnO3/Si heterojunction has a complicated electrical property resulted from its n--p-n energy band structure.

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备注/Memo

备注/Memo:
作者简介: 张孝青(1985—),女,硕士生; 朱明(联系人),女,博士,教授, zhuming2011@126.com.
基金项目: 江苏省自然科学基金资助项目(BK2004078).
引文格式: 张孝青,陈立立,何光旭,等.LCMO,LSMO单、双层薄膜的制备和电学性质[J].东南大学学报:自然科学版,2010,40(1):218-222. [doi:10.3969/j.issn.1001-0505.2010.01.041]
更新日期/Last Update: 2010-01-20