[1]严蘋蘋,陈继新,洪伟.毫米波单片低噪声放大器的研制[J].东南大学学报(自然科学版),2010,40(3):449-453.[doi:10.3969/j.issn.1001-0505.2010.03.003]
 Yan Pinpin,Chen Jixin,Hong Wei.Design and implementation of monolithic millimeter wave low noise amplifiers[J].Journal of Southeast University (Natural Science Edition),2010,40(3):449-453.[doi:10.3969/j.issn.1001-0505.2010.03.003]
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毫米波单片低噪声放大器的研制()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
40
期数:
2010年第3期
页码:
449-453
栏目:
电子科学与工程
出版日期:
2010-05-20

文章信息/Info

Title:
Design and implementation of monolithic millimeter wave low noise amplifiers
作者:
严蘋蘋 陈继新 洪伟
东南大学毫米波国家重点实验室, 南京 210096
Author(s):
Yan Pinpin Chen Jixin Hong Wei
State Key Laboratory of Millimeter Waves, Southeast University, Nanjing 210096, China
关键词:
低噪声放大器 砷化镓 毫米波 噪声系数
Keywords:
low noise amplifier GaAs millimeter wave noise figure
分类号:
TN72
DOI:
10.3969/j.issn.1001-0505.2010.03.003
摘要:
采用OMMIC 0.18 μm GaAs pHEMT工艺,研制了两级和三级2种毫米波单片低噪声放大器.以最小噪声度量为设计依据,通过适当提高偏置电流的方法改善毫米波频段的增益,使得放大器在保持噪声系数较小的同时获得较高的增益.两级低噪声放大器采用串联负反馈结合并联负反馈的结构,可以获得比较平坦的增益; 三级低噪声放大器采用三级相似的串联负反馈结构级联,可以紧凑结构、在相同的芯片尺寸下获得较高的增益,2种低噪声放大器芯片的尺寸均为1.5 mm×1.0 mm.测试结果表明,在28~40 GHz频段内,两级低噪声放大器增益最大为15.4 dB、噪声系数最小为3.2 dB; 三级低噪声放大器增益最大为24.8 dB、噪声系数最小为2.73 dB,达到预期目标.
Abstract:
Two millimeter wave low noise amplifiers(LNA)are designed and implemented with an OMMIC 0.18 μm GaAs pHEMT(pseudomorphic high electron mobility transistor)process. The amplifiers are designed based on minimum noise measure, and a method of increasing bias current is adopted to improve the gain. Thus the LNA can obtain higher gain while keeping a low noise figure at a millimeter wave frequency band. The two-stage LNA uses series and parallel feedback in different stages to achieve flat gain. The three-stage LNA uses three series feedback stages to achieve high gain in the same chip size. The chip sizes of both the LNAs are 1.5 mm×1.0 mm. In the frequency range of 28 to 40 GHz, the two-stage LNA achieves a maximum gain of 15.4 dB and a minimum noise figure of 3.2 dB, and the three-stage LNA achieves a maximum gain of 24.8 dB and a minimum noise figure of 2.73 dB. According to the test results, the amplifiers can operate well at 28 to 40 GHz.

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相似文献/References:

[1]黄庆安,吕世骥,童勤义.GaAs压电物性的研究[J].东南大学学报(自然科学版),1991,21(2):16.[doi:10.3969/j.issn.1001-0505.1991.02.003]
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备注/Memo

备注/Memo:
作者简介: 严蘋蘋(1978—),女,博士,讲师,ppyan@emfield.org.
基金项目: 国家重点基础研究发展计划(973计划)资助项目(2010CB327405)、国家自然科学基金委创新研究群体科学基金资助项目(60921063).
引文格式: 严蘋蘋,陈继新,洪伟.毫米波单片低噪声放大器的研制[J].东南大学学报:自然科学版,2010,40(3):449-453. [doi:10.3969/j.issn.1001-0505.2010.03.003]
更新日期/Last Update: 2010-05-20