[1]周昕杰,李蕾蕾,徐睿,等.深亚微米工艺EEPROM单元加固设计及辐照性能[J].东南大学学报(自然科学版),2011,41(3):518-521.[doi:10.3969/j.issn.1001-0505.2011.03.017]
 Zhou Xinjie,Li Leilei,Xu Rui,et al.EEPROM cell hardness design and radiation characteristics in deep submicron process[J].Journal of Southeast University (Natural Science Edition),2011,41(3):518-521.[doi:10.3969/j.issn.1001-0505.2011.03.017]
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深亚微米工艺EEPROM单元加固设计及辐照性能()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
41
期数:
2011年第3期
页码:
518-521
栏目:
电子科学与工程
出版日期:
2011-05-20

文章信息/Info

Title:
EEPROM cell hardness design and radiation characteristics in deep submicron process
作者:
周昕杰13李蕾蕾23徐睿3于宗光3
(1东南大学电子科学与工程学院,南京 210096)
(2西安电子科技大学微电子学院,西安 710071)
(3中国电子科技集团第五十八研究所,无锡 214035)
Author(s):
Zhou Xinjie13Li Leilei23Xu Rui3Yu Zongguang3
(1 School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China)
(2 School of Microelectronic, Xidian University, Xi’an 710071, China)
(3 No.58th Research Institute, China Electronics Technology Group Corporation, Wuxi 214035, China)
关键词:
总剂量效应EEPROM抗辐照加固
Keywords:
total ionizing does effect EEPROM(electrically erasable programmable read-only memory) radiation hardness
分类号:
TN303
DOI:
10.3969/j.issn.1001-0505.2011.03.017
摘要:
当普通EEPROM单元在太空中应用时,会受到辐照效应的影响,导致单元可靠性降低,寿命缩短,为此,基于0.18 μm工艺,设计出一种新型抗辐照EEPROM 单元.新单元采用环形栅和场区隔离管加固结构.加固后,单元面积为9.56 μm2,抗总剂量效应能力大于1 500 Gy,抗辐照能力明显优于普通结构.为明确失效机制,基于新单元结构在辐照条件下的阈值退化曲线,分析了辐照效应对存储单元的影响,并与普通单元的辐照效应相比较.结果表明:总剂量效应引起的边缘寄生管源/漏端漏电及场氧下漏电是深亚微米工艺EEPROM失效的主要机制.新单元针对失效机制的加固设计,提高了抗辐照能力和可靠性.该设计为满足太空应用中抗辐照存储器的需要,提供了良好的基础.
Abstract:
The general EEPROM (electrically erasable programmable read-only memory) cell is affected by radiation effect when used in space, which leads to reduction of the cell’s reliability and life. Therefore, a new EEPROM cell is designed in 0. 18 μm process, which uses annular gate and field oxide isolated transistor for radiation hardness. After reinforcement, the area of cell is 9. 56 μm2, and the ability of total ionizing dose effect resistance is above 1 500 Gy. These characteristics of anti-radiation are better than those of the general cell. Based on the degeneration of threshold voltage in radiation condition, the radiation effects of cell are analyzed and compared with the general cell for determining the failure mechanism. The results show that the electricity leakages of source/drain in the parasitic edge transistor and under field oxide caused by the total ionizing dose effect are the main failure mechanisms of EEPROM in the deep submicron process. The radiation hardness designs against these failure mechanisms enhance the ability of anti-radiation and reliability of the cell. This work provides a good basis for meeting the need of memory in space application.

参考文献/References:

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备注/Memo

备注/Memo:
作者简介:周昕杰(1981—),男,博士生;于宗光(联系人),男,博士,教授,博士生导师,yuzg@cetc58.com.
基金项目:国家科技重大专项资助项目(2008ZX01XXX).
引文格式: 周昕杰,李蕾蕾,徐睿,等.深亚微米工艺EEPROM单元加固设计及辐照性能[J].东南大学学报:自然科学版,2011,41(3):518-521.[doi:10.3969/j.issn.1001-0505.2011.03.017]
更新日期/Last Update: 2011-05-20