[1]郑维山,孙虎,刘斯扬,等.pLEDMOS导通电阻及阈值电压的热载流子退化[J].东南大学学报(自然科学版),2011,41(3):522-525.[doi:10.3969/j.issn.1001-0505.2011.03.018]
　Zheng Weishan,Sun Hu,Liu Siyang,et al.On-resistance and threshold voltage hot-carrier degradation of pLEDMOS[J].Journal of Southeast University (Natural Science Edition),2011,41(3):522-525.[doi:10.3969/j.issn.1001-0505.2011.03.018]
点击复制

pLEDMOS导通电阻及阈值电压的热载流子退化()
分享到：

《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
41
期数:
2011年第3期
页码:
522-525
栏目:
环境科学与工程
出版日期:
2011-05-20

文章信息/Info

Title:
On-resistance and threshold voltage hot-carrier degradation of pLEDMOS
作者:
郑维山1; 2; 孙虎3; 刘斯扬3; 孙伟锋3
(1南京大学电子科学与工程学院,南京 210093)
(2南京大学江苏省光电信息功能材料重点实验室,南京 210093)
(3东南大学国家ASIC系统工程技术研究中心,南京 210096)
Author(s):
Zheng Weishan1; 2; Sun Hu3; Liu Siyang3; Sun Weifeng3
(1School of Electronic Science and Engiceering, Nanjing University, Nanjing 210093, China)
(2Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China)
(3National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China)
关键词:
pLEDMOS; 热载流子注入; 导通电阻; 阈值电压; 退化
Keywords:
p-type lateral extended drain MOS;  hot-carrier-injection;  on-resistance;  threshold voltage;  degradation
分类号:
X703
DOI:
10.3969/j.issn.1001-0505.2011.03.018
摘要:
研究了不同漂移区长度及不同栅场极板长度的厚栅氧化层pLEDMOS器件由热载流子效应导致的导通电阻及阈值电压的退化现象及机理.实验结果表明,增加漂移区长度能改善器件的导通电阻的退化,但加速了阈值电压的退化; 增加栅场极板长度可以同时改善导通电阻和阈值电压的退化.借助TCAD仿真软件,模拟分析了不同漂移区长度及不同栅场极板长度的pLEDMOS器件的离子产生率和纵向电场,模拟结果解释了各种退化现象的机理,同时表明碰撞电离率和纵向电场的优化是改善器件参数退化的有效手段.
Abstract:
The influence of the different length of the drift region and the field plate upon hot-carrier-Induced on-resistance (Ron) and threshold voltage (Vth) degradation in p-type lateral extended drain MOS (pLEDMOS) transistor with thick gate oxide has been investigated. It is concluded that increasing the length of drift region can reduce the Ron degradation but enhance the Vth degradation. However, increasing the length of field plate can reduce the degradation of both Ron and Vth. The impact ionization rate and perpendicular electronic field of pLEDMOS with the different length of the drift region and the field plate were simulated based on TCAD, the results of which can explain the mechanism of the degradation of pLEDMOS. It is also shown that the optimization of the impact ionization rate and perpendicular electronic field is an effective way to reduce the degradation of pLEDMOS.

参考文献/References:

[1] Sun Weifeng,Wu Hong,Shi Longxing,et al.On-resistance degradation under different stress condition in high voltage pLEDMOS transistors and an improved method[J].Journal of Semiconductors,2008,29(2):214-218.
[2] 郝跃,刘红侠.微纳米MOS器件可靠性与失效机理[M].北京:科学出版社,2008:1-6.
[2] Sun Weifeng,Wu Jianhui,Yi Yangbo,et al.High-voltage power integrated circuit technology using bulk-silicon for plasma display panels data driver IC[J].Microelectron Eng,2004,71(1):112-118.
[4] Kim J,Roh T M,Kimet S G,et al.High-voltage power integrated circuit technology using SOI for driving plasma display panels[J].IEEE Trans Electron Devices,2001,48(6):1256-1259.
[5] Sun Weifeng,Wu Hong,Shi Longxing,et al.On-resistance degradations for different stress conditions in high-voltage pLEDMOS transistor with thick gate oxide[J].IEEE Electron Device Letters,2007,28(7):631-633.
[6] Lee S K,Kim C J,Kim J H,et al.Optimization of safe-operating-area using two peaks of body-current in submicron LDMOS transistors[C]//Proceedings of ISPSD.Osaka,Japan,2001:287-290.
[7] Huang D H,King E E,Palkut L J.Characterization of hot-carrier-induced degradation in p-channel MOSFET’s by total injected charge techniques[C]//IEEE Reliability Physics Symposium.San Jose,CA,USA,1994:31-41.
[8] Chen J F,Tian K S,Chen S Y,et al.On-resistance degradation induced by hot-carrier injection in ldmos transistors with STI in the drift region[J].IEEE Electron Device Letters,2008,29(9):1071-1073.
[9] Chen J F,Tian K S,Chen S Y,et al.An investigation on anomalous hot-carrier-induced on-resistance reduction in n-type ldmos transistors[J].IEEE Trans on Device and Materials Reliability,2009,9(3):459-463.
[10] Goud C B,Bhat K N.Two-dimensional analysis and design considerations of high-voltage planar junctions equipped with field plate and guard ring[J].IEEE Trans Electron Devices,1991,38(6):1497-1504.

备注/Memo

备注/Memo:
作者简介:郑维山(1977—),男,博士,zhengws@jstd.gov.cn.
基金项目:国家高技术研究发展计划(863计划) 资助项目 (2008AA01Z135)、国家自然科学基金资助项目(60876017,61006018)、江苏省科技支撑计划资助项目 (BE2009143).
引文格式: 郑维山,孙虎,刘斯扬,等.pLEDMOS导通电阻及阈值电压的热载流子退化[J].东南大学学报:自然科学版,2011,41(3):522-525.[doi:10.3969/j.issn.1001-0505.2011.03.018]
更新日期/Last Update: 2011-05-20