[1]林叶王健,朱恩,顾皋蔚,等.应用于对等速率10G-EPON的10Gbit/s突发模式激光驱动器设计[J].东南大学学报(自然科学版),2011,41(5):911-916.[doi:10.3969/j.issn.1001-0505.2011.05.004]
 Lin Ye,Wang Jian,Zhu En,et al.10Gbit/s burst-mode laser diode driver for symmetric-rate 10G-EPON applications[J].Journal of Southeast University (Natural Science Edition),2011,41(5):911-916.[doi:10.3969/j.issn.1001-0505.2011.05.004]
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应用于对等速率10G-EPON的10Gbit/s突发模式激光驱动器设计()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
41
期数:
2011年第5期
页码:
911-916
栏目:
信息与通信工程
出版日期:
2011-09-20

文章信息/Info

Title:
10Gbit/s burst-mode laser diode driver for symmetric-rate 10G-EPON applications
作者:
林叶1王健2朱恩1顾皋蔚1刘文松1
(1东南大学射频与光电集成电路研究所,南京 210096)
(2中国科学院自动化研究所,北京 100190)
Author(s):
Lin Ye1Wang Jian2Zhu En1Gu Gaowei1Liu Wensong1
(1Institute of RF- and OE-ICs, Southeast University, Nanjing 210096, China)
(2Institute of Automation, Chinese Academy of Sciences, Beijing 100190, China)
关键词:
万兆以太无源光网络(10G-EPON)激光驱动器突发模式IEEE 802.3avCMOS
Keywords:
10Gbit/s Ethernet passive optical networks (10G-EPON) laser diode driver (LDD) burst-mode (BM) IEEE 802.3av CMOS
分类号:
TN911
DOI:
10.3969/j.issn.1001-0505.2011.05.004
摘要:
针对IEEE 802.3av标准所定义的对等速率万兆以太无源光网络(10G-EPON)ONU相关应用,设计了一种10Gbit/s突发模式激光驱动器芯片,并对调制电路和偏置电路的设计进行了改进,以实现较短的突发开启/关断转换时间.本设计采用低成本的0.18μm CMOS工艺进行流片,整个芯片面积为575μm×675μm.测试表明:该芯片可工作在10.3125Gbit/s的速率上; 当电源电压为1.8 V时,可对50Ω负载提供高达36mA的调制电流.突发开启/关断转换时间均小于0.2ns,远低于IEEE 802.3av标准所规定的上限.该突发模式激光驱动器的输出满足10G-EPON时序参数的规定,适用于10G-EPON ONU相关应用.
Abstract:
A 10Gbit/s burst-mode laser diode driver is designed, which is optimized for symmetric-rate 10G-EPON optical network unit (ONU) applications described in the IEEE 802. 3av standard. Several improvements are implemented in the design of the modulation circuit and the bias circuit, in order to shorten the burst turn-on/-off delays. It is designed with a low-cost 0. 18μm CMOS process. The dimension of the laser diode driver IC is 575μm×675μm. On-chip test shows that it has a speed of 10. 3125Gbit/s, and is able to provide up to 36mA modulation current on 50Ω load under a 1. 8V power supply. The burst turn-on/-off delays are both less than 0. 2ns, which is much less than the criteria that the IEEE 802. 3av standard has proposed. The presented burst-mode laser diode divider meets the 10G-EPON timing parameter definitions, and is particularly suited to 10G-EPON ONU applications.

参考文献/References:

[1] Tanaka K,Agata A,Horiuchi Y.IEEE 802.3av 10G-EPON standardization and its research and development status [J].Journal of Lightwave Technology,2010,28(4):651-661.
[2] 韩盛杰,张俊杰,林如俭.10G EPON的ONU硬件设计与实现 [J].光通信技术,2009(5):5-7.
  Han Shengjie,Zhang Junjie,Lin Rujian.Design and implementation of 10Gigabit EPON ONU hardware [J].Optical Communication Technology,2009(5):5
  -7.(in Chinese)
[3] IEEE 802.3av 10G-EPON Task Force.IEEE 802.3avTM Carrier sense multiple access with collision detection (CSMA/CD) access method and physical layer specification,Amendment 1:physical layer specifications and management parameters for 10 Gb/s passive optical networks [S].New York:The Institute of Electrical and Electronics Engineers,Inc.,2009.
[4] Chua C K,Ajjikuttira A B.A 2.5Gbps burst mode laser diode driver in 0.18-um CMOS technology [C]//International Symposium on Integrated Circuits.New Orleans,USA,2007:184-187.
[5] Oh Y-H,Lee S-G,Le Q,et al.A CMOS burst-mode optical transmitter for 1.25-Gb/s Ethernet PON applications [J].IEEE Transactions on Circuits and Systems,2005,52(11):780-783.
[6] Li D-U,Huang L-R,Tsai C-M.A 3.5-Gb/s CMOS burst-mode laser driver with automatic power control using single power supply [C]//IEEE International Symposium on Circuits and Systems.Kobe,Japan,2005:5501-5504.
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备注/Memo

备注/Memo:
作者简介:林叶(1983—),男,博士生;朱恩 (联系人),男,博士,教授,博士生导师,zhuenpro@seu.edu.cn.
基金项目:江苏省科技支撑计划重点资助项目(BE2008128)、高等学校博士学科点专项科研基金资助项目(20090092120012).
引文格式: 林叶,王健,朱恩,等.应用于对等速率10G-EPON的10Gbit/s突发模式激光驱动器设计[J].东南大学学报:自然科学版,2011,41(5):911-916.[doi:10.3969/j.issn.1001-0505.2011.05.004]
更新日期/Last Update: 2011-09-20