[1]吴金,聂卫东,常昌远,等.基于失配控制的非线性补偿带隙基准电路设计[J].东南大学学报(自然科学版),2011,41(5):917-922.[doi:10.3969/j.issn.1001-0505.2011.05.005]
 Wu Jin,Nie Weidong,Chang Changyuan,et al.Design of nonlinear compensated bandgap reference based on mismatch control[J].Journal of Southeast University (Natural Science Edition),2011,41(5):917-922.[doi:10.3969/j.issn.1001-0505.2011.05.005]
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基于失配控制的非线性补偿带隙基准电路设计()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
41
期数:
2011年第5期
页码:
917-922
栏目:
电路与系统
出版日期:
2011-09-20

文章信息/Info

Title:
Design of nonlinear compensated bandgap reference based on mismatch control
作者:
吴金1聂卫东2常昌远3渠宁13李浩13
(1东南大学无锡分校,无锡 214135)
(2江南大学物联网工程学院,无锡 214122)
(3东南大学集成电路学院,南京 210096)
Author(s):
Wu Jin1Nie Weidong2Chang Changyuan3Qu Ning13Li Hao13
(1 Wuxi Branch, Southeast University, Wuxi 214135, China)
(2 School of Internet of Things Engineering, Southern Yangtze University, Wuxi 214122, China)
(3 College of Integrated Circuits, Southeast University, Nanjing 210096, China)
关键词:
带隙基准失配误差非线性补偿温度系数
Keywords:
bandgap reference mismatch error nonlinear compensation temperature coefficient
分类号:
TN402
DOI:
10.3969/j.issn.1001-0505.2011.05.005
摘要:
在一阶线性补偿基准非线性温度特性分析基础上,提出了利用基准电路内部可控非线性失调电压实现高阶补偿的方法,即利用3路互偏结构代替传统基准电路中的2路自偏置结构,在宽温度范围内,理想状态下的基准温度系数相比一阶线性补偿明显降低.与其他类型的分段高阶补偿相比,基于失配补偿的带隙基准不仅结构简单,而且工艺稳定性更好.基于CSMC 0.18μm CMOS工艺完成了该基准电路的MPW验证,在-20~120℃温度范围内,基准温度系数的测试结果最低为6.2×10-6/℃.基于理论与实测结果误差产生原因的分析,提出了电阻修调以及面积功耗折中方面的改进措施.
Abstract:
Based on the analysis of the nonlinear-temperature characteristics of the first-order linear compensated bandgap reference (BGR), a high-order nonlinear compensation method is proposed by utilizing the controllable systemic nonlinear offset voltage within the bandgap circuit, where the three-branches coupling biasing structures are used to replace the traditional two-branches self-biasing structures, and the ideal temperature coefficient within a wide temperature range is reduced significantly as compared to that of the first-order linear compensation one. Besides, compared with other types of segmental high-order compensated circuit, the mismatch compensated BGR is not only simple in circuit structure but also more stable in manufacture process. The proposed reference is fabricated in CSMC 0. 18 μm CMOS process, and the tested minimum temperature coefficient within a temperature range from -20 to 120 ℃ is 6. 2×10-6/℃. Finally, based on the error analysis between theory and experimental results, improvements in resistor trimming and tradeoffs between area and power are proposed.

参考文献/References:

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备注/Memo

备注/Memo:
作者简介:吴金(1965—),男,博士,教授,jwu@seu.edu.cn.
基金项目:国家核高基重大专项资助项目(2009ZX01031-003-003).
引文格式: 吴金,聂卫东,常昌远,等.基于失配控制的非线性补偿带隙基准电路设计[J].东南大学学报:自然科学版,2011,41(5):917-922.[doi:10.3969/j.issn.1001-0505.2011.05.005]
更新日期/Last Update: 2011-09-20