[1]陈健,朱奎英,刘斯扬,等.SOI双槽隔离结构的耐压特性[J].东南大学学报(自然科学版),2012,42(2):234-238.[doi:10.3969/j.issn.1001-0505.2012.02.008]
 Chen Jian,Zhu Kuiying,Liu Siyang,et al.Breakdown characteristic of SOI trench structure[J].Journal of Southeast University (Natural Science Edition),2012,42(2):234-238.[doi:10.3969/j.issn.1001-0505.2012.02.008]
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SOI双槽隔离结构的耐压特性()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
42
期数:
2012年第2期
页码:
234-238
栏目:
电子科学与工程
出版日期:
2012-03-20

文章信息/Info

Title:
Breakdown characteristic of SOI trench structure
作者:
陈健 朱奎英 刘斯扬 钱钦松 孙伟锋
东南大学国家专用集成电路系统工程技术研究中心,南京 210096
Author(s):
Chen Jian Zhu Kuiying Liu Siyang Qian Qingsong Sun Weifeng
National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China
关键词:
双槽隔离结构 耐压模型 压降不均衡 沟槽纵横比 槽间距 临界击穿电压
Keywords:
double trench isolation structure breakdown model imbalance of voltage drop trench aspect ratio trench spacing critical breakdown voltage
分类号:
TN386
DOI:
10.3969/j.issn.1001-0505.2012.02.008
摘要:
理论推导了绝缘体上硅(SOI)双槽隔离结构的耐压模型.该模型表明,在SOI双槽隔离结构中,因隔离氧化层压降的不均衡,高压侧隔离氧化层提前发生介质击穿,从而导致SOI双槽隔离结构的临界击穿电压小于理论值.增大沟槽纵横比和减小槽间距可以减弱隔离氧化层上压降的不均衡性,提高SOI双槽隔离结构的临界击穿电压.Sentaurus器件仿真软件的模拟结果和华润上华半导体有限公司0.5 μm 200 V SOI工艺平台下的流片测试结果均证明,减小槽间距和增大沟槽纵横比是提高双槽隔离结构临界击穿电压的有效方法,同时也证明了该耐压模型的正确性.
Abstract:
The breakdown model of double trench isolation structure on silicon on insulator(SOI)wafer is proposed. This model indicates that the imbalance of the voltage drop at isolation oxide layers of the double trench isolation structure leads the isolation oxide layer near the high voltage region to break down in advance, making the critical breakdown voltage less than the theoretical value. Furthermore, increasing the trench aspect ratio and decreasing the trench spacing can weaken the imbalance of the voltage drop and improve the critical breakdown voltage of the double trench isolation structure on SOI wafer. The simulation results by Sentaurus device simulation software and the experiment results on CSMC 0.5 μm 200 V SOI process platform from Central Semiconductor Manufacturing Technologies Fab1 Co.,Ltd. show that decreasing the trench spacing and increasing the trench aspect ratio are the effective way to improve the critical breakdown voltage of the double trench isolation structure on SOI wafer. The results also prove the validity of the proposed model.

参考文献/References:

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备注/Memo

备注/Memo:
作者简介: 陈健(1965—),男,博士生; 孙伟锋(联系人),男,博士,教授,博士生导师,swffrog@seu.edu.cn.
基金项目: 江苏省自然科学基金资助项目(BK2011059).
引文格式: 陈健,朱奎英,刘斯扬,等.SOI双槽隔离结构的耐压特性[J].东南大学学报:自然科学版,2012,42(2):234-238. [doi:10.3969/j.issn.1001-0505.2012.02.008]
更新日期/Last Update: 2012-03-20