[1]周云波,于宗光,封晴,等.与ONO反熔丝FPGA匹配的高压器件设计[J].东南大学学报(自然科学版),2012,42(4):614-617.[doi:10.3969/j.issn.1001-0505.2012.04.007]
 Zhou Yunbo,Yu Zongguang,Feng Qing,et al.High-voltage device applications in ONO antifuse FPGA[J].Journal of Southeast University (Natural Science Edition),2012,42(4):614-617.[doi:10.3969/j.issn.1001-0505.2012.04.007]
点击复制

与ONO反熔丝FPGA匹配的高压器件设计()
分享到:

《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
42
期数:
2012年第4期
页码:
614-617
栏目:
电子科学与工程
出版日期:
2012-07-20

文章信息/Info

Title:
High-voltage device applications in ONO antifuse FPGA
作者:
周云波1 于宗光12 封晴2 胡凯2
1 江南大学物联网工程学院,无锡214122; 2 中国电子科技集团公司第五十八研究所,无锡214035
Author(s):
Zhou Yunbo1 Yu Zongguang12 Feng Qing2 Hu Kai2
1 School of Internet of Things Engineering,Jiangnan University, Wuxi 214122, China
2 China Electronic Technology Group Corporation No.58 Research Institute, Wuxi 214035, China
关键词:
高压器件 ONO型反熔丝 FPGA
Keywords:
high-voltage device ONO antifuse field programmable gate array(FPGA)
分类号:
TN386
DOI:
10.3969/j.issn.1001-0505.2012.04.007
摘要:
描述了一种与ONO反熔丝现场可编程门阵列(FPGA)匹配的高压nMOSFET的设计.该器件采用中国电子科技集团公司第五十八研究所晶圆的1.0 μm 2P2M ONO反熔丝工艺生产实现.该工艺中,通过一次离子注入和高温推进实现了深结HVNwell; 通过将高压注入与栅极多晶保持0.2 μm 的间距解决了增加结深、提高速度与降低穿通击穿电压的矛盾; 通过一次离子注入实现了高压nMOSFET阈值电压的调整.测试结果表明:高压nMOSFET 的击穿电压达到21~23 V,远大于ONO反熔丝13.5 V的编程电压; 饱和电流为4.32 mA,与工艺改进前相比饱和电流明显增大,工作速度得到提升,满足反熔丝FPGA工作频率的要求; 阈值电压为0.78 V,与常压器件兼容.
Abstract:
A design of the high-voltage devices which matches antifuse-based FPGA(field programmable gate array)characteristics is presented. The 1.0 μm 2P2M ONO antifuse process of CETC NO.58 Research Institute was used to design and produce a high-voltage nMOSFET. Particularly by way of once ion implantation and high temperature promotion, a deep junction HVNwell was created. By keeping 0.2 μm space between gate and high-voltage injection, the conflict between the increase in the depth of junction and the speed and the reducing of low punch through breakdown voltage is resolved. To adjust the threshold voltage of the high-voltage nMOSFET by once ion implantation. Test results show that the breakdown voltage of high voltage nMOSFET can reach 21 to 23 V, which is far greater than the programming voltage of 13.5 V. The saturation current is 4.32 mA, which is significantly higher than that before the process improvement. The threshold voltage 0.78 V is matched with that of general device.

参考文献/References:

[1] 冯彦君,华更新,刘淑芬.航天电子抗辐射研究综述[J].宇航学报,2007,28(5):1071-1080.
  Feng Yanjun,Hua Gengxin,Liu Shufen.Radiation hardness for space electronics [J].Journal of Astronautics,2007,28(5):1071-1080.(in Chinese)
[2] Brac E,Ferreyra P,Velazco R,et al.Test and qualification of a fault tolerant FPGA based active antenna system for space applications [C] //10th Test Workshop(LATW).Rio de Janeiro,Brazil,2009:4813814.
[3] 王刚,李平,李威,等.反熔丝的研究与应用[J].材料导报,2011,25(11):30-33.
  Wang Gang,Li Ping,Li Wei,et al.Research and application of antifuse [J].Materials Review,2011,25(11):30-33.(in Chinese)
[4] Greene J,Hamdy E,Beal S,et al.Antifuse field programmable gate arrays [J].Proceeding of IEEE,1993,81(7):1042-1056.
[5] Chiang S,Wang R,Chen J,et al.Oxide-nitride-oxide antifuse reliability [C] //28th Annual Proceedings of Reliability Physics Symposium.New Orleans,LA,USA,1990:186-192.
[6] 刘奎伟,韩郑生,钱鹤,等.兼容标准CMOS工艺的高压器件设计与模拟[J].半导体学报,2003,24(7):758-762.
  Liu Kuiwei,Han Zhengsheng,Qian He,et al.Design and simulation of high-voltage CMOS device compatible with standard CMOS Technologies[J].Chinese Journal of Semiconductors,2003,24(7):758-762.(in Chinese)
[7] Zhao Wenbin,Li Leilei,Yu Zongguang.High-voltage MOSFETs in a 0.5μm CMOS process [J].Chinese Journal of Semiconductors,2008,29(7):1268-1273.
[8] 王晓慧,杜寰韩,郑生,等.具有加长LDD结构的高压CMOS器件[J].功能材料与器件学报,2007,13(3):275-278.
  Wang Xiaohui,Du Huanhan,Zheng Sheng.High voltage CMOS devices with lengthened LDD structures [J].Journal of Functional Materials and Devices,2007,13(3):275-278.(in Chinese)
[9] Liu Siyang,Qian Qinsong,Sun Weifeng.Analysis of hot-carrier degradation in N-LDMOS transistor with step gate oxide [J].Journal of Southeast University:English Edition,2010,26(1):17-20.
[10] Chandhi S K.VLSI fabrication principles [M].New York:John Wiley & Sons,Inc.,1994:717.

备注/Memo

备注/Memo:
作者简介: 周云波(1984—),女,博士生; 于宗光(联系人),男,博士,教授,博士生导师,yuzg58@sina.com.
基金项目: 江苏省“333工程”科研资助项目(BRA2011115).
引文格式: 周云波,于宗光,封晴,等.与ONO反熔丝FPGA匹配的高压器件设计[J].东南大学学报:自然科学版,2012,42(4):614-617. [doi:10.3969/j.issn.1001-0505.2012.04.007]
更新日期/Last Update: 2012-07-20