[1]朱荣霞,黄栋,马德军,等.功率VDMOS器件的新型SPICE模型[J].东南大学学报(自然科学版),2013,43(3):478-482.[doi:10.3969/j.issn.1001-0505.2013.03.006]
 Zhu Rongxia,Huang Dong,Ma Dejun,et al.Novel SPICE model for power VDMOS device[J].Journal of Southeast University (Natural Science Edition),2013,43(3):478-482.[doi:10.3969/j.issn.1001-0505.2013.03.006]
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功率VDMOS器件的新型SPICE模型()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
43
期数:
2013年第3期
页码:
478-482
栏目:
电路与系统
出版日期:
2013-05-20

文章信息/Info

Title:
Novel SPICE model for power VDMOS device
作者:
朱荣霞1黄栋1马德军2王锦春2孙伟锋1张春伟1
1东南大学国家专用集成电路系统工程技术研究中心, 南京 210096; 2中国空空导弹研究院红外探测器技术航空科技重点实验室, 洛阳471009
Author(s):
Zhu Rongxia1 Huang Dong1 Ma Dejun2 Wang Jinchun2 Sun Weifeng1 Zhang Chunwei1
1National ASIC System Engineering Center, Southeast University, Nanjing 210096, China
2 Aviation Key Laboratory of Science and Technology on Infrared Detector, China Airborne Missile Academy, Luoyang 471009, China
关键词:
VDMOS SPICE模型 内部节点 准饱和效应
Keywords:
VDMOS(vertical double diffused metal oxide semiconductor) SPICE(simulation program with integrated circuit emphasis)model internal nodes quasi-saturation effect
分类号:
TN432
DOI:
10.3969/j.issn.1001-0505.2013.03.006
摘要:
为解决垂直双扩散金属氧化物半导体(VDMOS器件)模型精确度差的问题,建立了一套新的VDMOS模型.与其他模型相比,该模型在VDMOS器件源极、漏极、栅极3个外部节点的基础上,又增加了4个内部节点,从而将VDMOS器件视为1个N沟道金属氧化物半导体(NMOS)与4个电阻的串联.采用表面势建模的原理计算了积累区的电阻,并对寄生结型场效应晶体管(JFET)耗尽及夹断2种状态进行分析,计算出寄生JFET区的电阻.分别考虑VDMOS器件外延层区与衬底区的电流路径,建立了这2个区域的电阻模型.模型仿真值与器件测试值的比较结果表明,该模型能够准确拟合VDMOS器件线性区、饱和区及准饱和区的电学特性.
Abstract:
In order to solve the precision problem of the existing models for VDMOS(vertical double diffused metal oxide semiconductor), a novel model for VDMOS device is presented. In contrast to other models, in this model, four internal nodes are added besides three external nodes(source, drain, gate); thus the VDMOS device can be treated as a series connection of a normal NMOS(N-channel metal oxide semiconductor)and four series resistors. The resistor of the accumulation region is calculated by using the theory of the surface potential modeling. By analyzing the depletion and the pinch-off effects of the parasitic JFET(junction field-effect transistor), the model for this region is set up. The current paths in the regions of the epitaxial layer and the substrate are considered respectively, and the corresponding resistor models are built. The comparison results between the simulation data and the measure data show that this model can accurately describe the electrical properties of the linear region, the saturation region and the quasi-saturation region of the VDMOS device.

参考文献/References:

[1] Zhang Long, Yu Huilin, Wu Yifan, et al. On state output characteristics and transconductance analysis of high voltage(600V)SJ-VDMOS[C]//Proceedings of 2012 IEEE International Conference on Solid-State and Integrated-Circuit Technology. Xian, China, 2012: 1-3.
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相似文献/References:

[1]夏晓娟,吴逸凡,祝靖,等.600 V VDMOS器件的反向恢复热失效机理[J].东南大学学报(自然科学版),2013,43(6):1243.[doi:10.3969/j.issn.1001-0505.2013.06.021]
 Xia Xiaojuan,Wu Yifan,Zhu Jing,et al.Thermal failure mechanism of 600 V VDMOS during reverse recovery[J].Journal of Southeast University (Natural Science Edition),2013,43(3):1243.[doi:10.3969/j.issn.1001-0505.2013.06.021]

备注/Memo

备注/Memo:
作者简介: 朱荣霞(1989—),女,硕士生;孙伟锋(联系人),男,博士,教授,博士生导师,swffrog@seu.edu.cn.
基金项目: 航空科学基金资助项目(20122469)、新世纪优秀人才支持计划资助项目(NCET-10-0331)、江苏省自然科学基金资助项目(BK2012559).
引文格式: 朱荣霞,黄栋,马德军,等.功率VDMOS器件的新型SPICE模型[J].东南大学学报:自然科学版,2013,43(3):478-482. [doi:10.3969/j.issn.1001-0505.2013.03.006]
更新日期/Last Update: 2013-05-20