[1]徐申,张春伟,刘斯扬,等.动态应力下功率n-LDMOS器件热载流子退化恢复效应[J].东南大学学报(自然科学版),2013,43(4):691-694.[doi:10.3969/j.issn.1001-0505.2013.04.004]
 Xu Shen,Zhang Chunwei,Liu Siyang,et al.Recovery effect of hot-carrier degradation for n-LDMOS device under dynamic conditions[J].Journal of Southeast University (Natural Science Edition),2013,43(4):691-694.[doi:10.3969/j.issn.1001-0505.2013.04.004]
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动态应力下功率n-LDMOS器件热载流子退化恢复效应()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
43
期数:
2013年第4期
页码:
691-694
栏目:
电子科学与工程
出版日期:
2013-07-20

文章信息/Info

Title:
Recovery effect of hot-carrier degradation for n-LDMOS device under dynamic conditions
作者:
徐申张春伟刘斯扬王永平孙伟锋
东南大学国家专用集成电路系统工程技术研究中心, 南京 210096
Author(s):
Xu Shen Zhang Chunwei Liu Siyang Wang Yongping Sun Weifeng
National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China
关键词:
热载流子 恢复效应 退陷阱效应 电荷泵
Keywords:
hot-carrier recovery effect de-trapping effect charge pumping
分类号:
TN386
DOI:
10.3969/j.issn.1001-0505.2013.04.004
摘要:
针对功率n-LDMOS器件在动态应力条件下的热载流子退化恢复效应进行了实验和理论研究.电荷泵实验测试和器件专用计算机辅助软件的仿真分析结果表明,在施加不同的动态应力条件下,功率n-LDMOS器件存在2种主要的热载流子退化机理,即鸟嘴区域的热空穴注入和沟道区域的界面态产生,均有明显的退化恢复效应.对功率n-LDMOS器件施加2个连续3600s的不同应力,观察每个阶段结束时刻的CP电流曲线,发现该器件在应力变换期间确实发生了热空穴的退陷阱效应.然后,对功率n-LDMOS器件施加3个连续3600s的不同应力,观察每个阶段结束时刻的CP电流曲线,发现器件处于关断阶段时,已产生的界面态存在一定程度的复合.
Abstract:
The recovery effect of hot-carrier degradation for n-LDMOS(lateral double-diffused metal-oxide semiconductor)device under dynamic conditions is investigated by experiments and theoretical analysis. The charge pumping(CP)experimental results and the simulation results by technology computer aided design(TCAD)show that, under the different dynamic conditions, the two main degradation mechanisms in n-LDMOS device, hot-carrier injection at the birds beak region and interface state generation at the channel region, exhibit obvious recovery effect. When two different stresses in 3600s are exerted, the CP current curves at the end moment of each phase show that the de-trapping effects of hot-carriers really happen during the transformation of stress. When three different stresses in 3600s are exerted, the CP current curves at the end moment of each phase show that the produced interface states compound to some extent as the device is on off stage.

参考文献/References:

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[8] Moens P, van den Bosch G, Tack M. Hole trapping and de-trapping effects in LDMOS devices under dynamic stress [C]//Proceedings of 2006 International Electron Devices Meeting. San Francisco, CA, USA, 2006:1-4.
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备注/Memo

备注/Memo:
作者简介: 徐申(1980—),男,博士,讲师;孙伟锋(联系人),男,博士,教授,博士生导师,swffrog@seu.edu.cn.
基金项目: 国家自然科学基金资助项目(61204083)、新世纪优秀人才支持计划资助项目(NCET-10-0331)、江苏省自然科学基金资助项目(BK2011059)、 东南大学无锡分校科研引导资金助项目.
引文格式: 徐申,张春伟,刘斯扬,等.动态应力下功率n-LDMOS器件热载流子退化恢复效应[J].东南大学学报:自然科学版,2013,43(4):691-694. [doi:10.3969/j.issn.1001-0505.2013.04.004]
更新日期/Last Update: 2013-07-20