参考文献/References:
[1] Gruner D, Sorge R, Bengtsson O, et al. Analysis, design, and evaluation of LDMOS FETs for RF power applications up to 6 GHz[J].IEEE Transactions on Microwave Theory and Techniques, 2010, 58(12): 4022-4030.
[2] Faccio F, Allongue B, Blanchot G, et al. TID and displacement damage effects in vertical and lateral power MOSFETs for integrated DC-DC converters[J]. IEEE Transactions on Nuclear Science, 2010, 57(4): 1790-1797.
[3] Chevaux N, Souza D. Comparative analysis of VDMOS/LDMOS power transistors for RF amplifiers[J].IEEE Transactions on Microwave Theory and Techniques, 2009, 57(11):2643-2651.
[4] Chen J F, Tian K S, Chen S Y.Mechanisms of hot-carrier-induced threshold-voltage shift in high-voltage P-type LDMOS transistor[J].IEEE Transactions on Electron Devices,2009, 56(12): 3203-3205.
[5] Hu C, Tam S C, Hsu F C, et al. Hot-electron-induced MOSFET degradation model, monitor and improvement[J]. IEEE Transactions on Electron Device, 1985, 32(5): 375-384.
[6] Moens P, Mertens J, Bauwens F, et al.A comprehensive model for hot-carrier degradation in LDMOS transistors[C]//Proceedings of the 45th IEEE Annual International Reliability Physics Symposium. Phoenix, Arizona,USA, 2007:492-497.
[7] Sun Weifeng, Wu Hong, Shi Longxing, et al, On-resistance degradations for different stress conditions in high-voltage pLEDMOS transistor with thick gate oxide[J].IEEE Electron Device Letters, 2007, 28(7): 631-634.
[8] Moens P, van den Bosch G, Tack M. Hole trapping and de-trapping effects in LDMOS devices under dynamic stress [C]//Proceedings of 2006 International Electron Devices Meeting. San Francisco, CA, USA, 2006:1-4.
[9] Chang C C, Lin J F, Wang T, et al. Physics and characterization of various hot-carrier degradation modes in LDMOS by using a three-region charge-pumping technique [J]. IEEE Transactions on Electron Device and Materials Reliability, 2006, 6(3): 358-363.
[10] Chen J F, Wu K M, Lin K W, et al. Hot-carrier reliability in submicrometer 40V LDMOS transistors with thick gate oxide[C]//Proceedings of the 43rd IEEE Annual International Reliability Physics Symposium. Phoenix,Arizona,USA,2005: 560-564.
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