[1]张春伟,刘斯扬,张艺,等.pMOSFET的NBTI退化机理及内在影响因素[J].东南大学学报(自然科学版),2015,45(4):663-667.[doi:10.3969/j.issn.1001-0505.2015.04.009]
 Zhang Chunwei,Liu Siyang,Zhang Yi,et al.NBTI degradation mechanism and its influence factors for pMOSFET[J].Journal of Southeast University (Natural Science Edition),2015,45(4):663-667.[doi:10.3969/j.issn.1001-0505.2015.04.009]
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pMOSFET的NBTI退化机理及内在影响因素()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
45
期数:
2015年第4期
页码:
663-667
栏目:
电子科学与工程
出版日期:
2015-07-20

文章信息/Info

Title:
NBTI degradation mechanism and its influence factors for pMOSFET
作者:
张春伟1刘斯扬1张艺1孙伟锋1苏巍2张爱军2刘玉伟2胡久利2何骁伟2
1东南大学国家专用集成电路系统工程技术研究中心, 南京210096; 2华润上华科技有限公司, 无锡214028
Author(s):
Zhang Chunwei1 Liu Siyang1 Zhang Yi1 Sun Weifeng1 Su Wei2 Zhang Aijun2 Liu Yuwei2 Hu Jiuli2 He Xiaowei2
1National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China
2CSMC Technology Company, Wuxi 214028, China
关键词:
负偏温度不稳定性 衬底偏置效应 栅氧化层电场 沟道载流子浓度
Keywords:
negative bias temperature instability(NBTI) substrate bias effect gate oxide electric field channel carrier density
分类号:
TN386.1
DOI:
10.3969/j.issn.1001-0505.2015.04.009
摘要:
研究了P型MOSFET的NBTI效应退化机理,以及栅氧化层电场和沟道载流子浓度对NBTI效应的影响.首先,通过电荷泵实验对NBTI应力带来的pMOSFET的界面损伤进行了测试,并利用TCAD仿真软件对测试结果进行分析,结果表明该器件的NBTI退化主要由其沟道区的界面态产生引起,而电荷注入的影响相对可以忽略.然后,通过施加衬底偏置电压的方法实现了增加器件栅氧化层电场但保持沟道载流子浓度不变的效果,进而研究了栅氧化层电场和沟道载流子浓度2个内在因素分别对NBTI退化的影响.最后,通过对比不同栅极电压和不同衬底偏置电压条件下器件的2个内在影响因素变化与NBTI退化的关系,证明了pMOSFET的NBTI效应主要由器件的栅氧化层电场决定,沟道载流子浓度对器件NBTI效应的影响可以忽略.
Abstract:
The negative bias temperature instability(NBTI)degradation mechanism and the influences of the gate oxide field and the channel carrier density on the NBTI are investigated for a P-type metallic oxide semiconductor field effect transistor(MOSFET). First, the interface damages induced by the NBTI stresses are measured by the charge pumping(CP)experiments. Through analyzing CP results with the technology computer aided design(TCAD)simulations, it is shown that the NBTI degradation is dominated by the interface states generation in the channel region, while the influence of charge injection is relatively ignorable. Then, by applying the substrate bias, the constant channel carrier density is maintained when the gate oxide electric field is increased. As a result, the influences of gate oxide electric field and channel carrier density on the NBTI degradations are investigated, respectively. Finally, by comparing the NBTI degradation and the influence factors variations under different substrate bias and gate bias conditions, it is proved that the NBTI effect of the pMOSFET is determined by the gate oxide electric field, and the influence of the channel carrier density on the NBTI is relatively negligible.

参考文献/References:

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备注/Memo

备注/Memo:
收稿日期: 2015-02-03.
作者简介: 张春伟(1988—),男,博士生;孙伟锋(联系人),男,博士,教授,博士生导师,swffrog@seu.edu.cn.
基金项目: 港澳台科技合作专项资助项目(2014DFH10190)、青蓝工程资助项目.
引用本文: 张春伟,刘斯扬,张艺,等.pMOSFET的NBTI退化机理及内在影响因素[J].东南大学学报:自然科学版,2015,45(4):663-667. [doi:10.3969/j.issn.1001-0505.2015.04.009]
更新日期/Last Update: 2015-07-20