[1]张艺,张春伟,刘斯扬,等.功率LIGBT热载流子退化机理及环境温度影响[J].东南大学学报(自然科学版),2016,46(2):255-259.[doi:10.3969/j.issn.1001-0505.2016.02.005]
 Zhang Yi,Zhang Chunwei,Liu Siyang,et al.Hot-carrier degradation mechanism and influence of ambient temperature for power LIGBT[J].Journal of Southeast University (Natural Science Edition),2016,46(2):255-259.[doi:10.3969/j.issn.1001-0505.2016.02.005]
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功率LIGBT热载流子退化机理及环境温度影响()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
46
期数:
2016年第2期
页码:
255-259
栏目:
电子科学与工程
出版日期:
2016-03-20

文章信息/Info

Title:
Hot-carrier degradation mechanism and influence of ambient temperature for power LIGBT
作者:
张艺张春伟刘斯扬周雷雷孙伟锋
东南大学国家专用集成电路系统工程技术研究中心, 南京210096
Author(s):
Zhang Yi Zhang Chunwei Liu Siyang Zhou Leilei Sun Weifeng
National ASIC System Engineering Technology Research Center, Southeast University, Nanjing 210096, China
关键词:
横向绝缘栅双极型晶体管 环境温度 热载流子效应 退化
Keywords:
lateral insulated gate bipolar transistor(LIGBT) ambient temperature hot-carrier effect degradation
分类号:
TN386.2
DOI:
10.3969/j.issn.1001-0505.2016.02.005
摘要:
研究了横向绝缘栅双极型晶体管(LIGBT)的热载流子退化机理及环境温度对其热载流子退化的影响.结果表明,器件的主导退化机制是鸟嘴处大量界面态的产生,从而导致饱和区阳极电流Iasat和线性区阳极电流Ialin存在较大的退化的主要原因,同时,由于Ialin的分布比Iasat的分布更靠近器件表面,故Ialin的退化比Iasat的退化更严重;而器件沟道区的碰撞电离和热载流子损伤很小,使得阈值电压Vth在应力前后没有明显的退化.在此基础上,进一步研究了环境温度对LIGBT器件的热载流子退化的影响.结果表明,LIGBT呈现正温度系数,且高温下LIGBT的阈值电压会降低,使得相同应力下其电流增大,导致器件碰撞电离的增大,增强了器件的热载流子损伤.
Abstract:
The mechanism of hot-carrier degradation for lateral insulated gate bipolar transistor(LIGBT)and the influence of ambient temperature are investigated. The results indicate that the main degradation mechanism is the generation of a large number of interface states at the beak of LIGBT, which leads to the large decreases of the saturation-region anode current Iasat and the linear-region anode current Ialin. Meanwhile, the distribution of Ialin is much closer to the device surface comparing with that of Iasat, so the degradation of Ialin is more serious than that of Iasat. In the channel region, the impact ionization and the hot carrier damage are tiny; as a result, the threshold voltage Vth remains constant before and after the stress. Moreover, the influence of ambient temperature on the hot carrier degradation of LIGBT is also investigated. LIGBT shows positive temperature coefficient, and the decreased threshold voltage under the high temperature condition induces the increase of the current of LIGBT under the same stress, which leads to the increase of impact ionization. Thus, finally enhanceing the hot-carrier damage of LIGBT.

参考文献/References:

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备注/Memo

备注/Memo:
收稿日期: 2015-09-17.
作者简介: 张艺(1991—),女,硕士生;孙伟锋(联系人),男,博士,教授,博士生导师,swffrog@seu.edu.cn.
基金项目: 国家自然科学基金资助项目(61204083)、江苏省杰出青年基金资助项目(BK20130021)、港澳台科技合作专项资助项目(2014DFH10190)、江苏省“青蓝工程”资助项目、中央高校基本科研业务费专项资金资助项目、江苏省普通高校研究生科研创新计划资助项目(SJLX-0076).
引用本文: 张艺,张春伟,刘斯扬,等.功率LIGBT热载流子退化机理及环境温度影响[J].东南大学学报(自然科学版),2016,46(2):255-259. DOI:10.3969/j.issn.1001-0505.2016.02.005.
更新日期/Last Update: 2016-03-20