[1]窦江玲,徐金平,徐梦苑.基于Schottky管安装电路环境三维模型的W波段全波段三倍频器[J].东南大学学报(自然科学版),2018,48(1):1-6.[doi:10.3969/j.issn.1001-0505.2018.01.001]
 Dou Jiangling,Xu Jinping,Xu Mengyuan.W-band full band tripler based on 3D EM model in installation circuit environment for Schottky diodes[J].Journal of Southeast University (Natural Science Edition),2018,48(1):1-6.[doi:10.3969/j.issn.1001-0505.2018.01.001]
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基于Schottky管安装电路环境三维模型的W波段全波段三倍频器()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
48
期数:
2018年第1期
页码:
1-6
栏目:
电子科学与工程
出版日期:
2018-01-20

文章信息/Info

Title:
W-band full band tripler based on 3D EM model in installation circuit environment for Schottky diodes
作者:
窦江玲徐金平徐梦苑
东南大学毫米波国家重点实验室, 南京 210096
Author(s):
Dou Jiangling Xu Jinping Xu Mengyuan
State Key Laboratory of Millimeter Waves, Southeast University, Nanjing 210096, China
关键词:
W波段 三倍频器 Schottky二极管 输入输出阻抗
Keywords:
W-band frequency tripler Schottky diode input and output impedance
分类号:
TN771
DOI:
10.3969/j.issn.1001-0505.2018.01.001
摘要:
为了改善W波段全波段Schottky二极管三倍频器高端性能,建立倍频二极管实际安装电路环境下的三维精确仿真模型. 在传统去嵌入法提取二极管等效电路参数工作基础上,改进了阻抗参数提取方法.采用UMS公司的DBES105a双Schottky结二极管作为倍频器件,将二极管封装、焊盘(安装二极管的微带端线)及邻近的腔体空间作为一个子区域进行三维建模分析,结合Schottky结的非线性模型,深入研究了焊盘尺寸、管子安装高度及腔体尺寸对输入输出阻抗宽带特性的影响.在此基础上,采用场路结合的仿真技术,优化设计了W波段宽带无源三倍频器.实验测试结果表明,在约为20 dBm功率激励下,所设计的三倍频器在75~110 GHz内输出功率典型值为5 dBm,功率波动小于±1.25 dBm,实现了倍频器在W波段全波段优良的功率平坦度特性.
Abstract:
To improve the characteristics of W-band frequency triplers at the upper end of the full frequency band, an accurate 3D EM(electromagnetic)model for the Schottky diodes together with their actual installation circuit environment is established. The method for extracting the equivalent impedance parameters is improved based on the traditional de-embedding method for modeling the Schottky diodes. By utilizing two Schottky diode chips, DBES105a delivered by UMS as multiply devices, the package of the diodes, mounting pads(microstrip ends, upon which the diodes are mounted)as well as their adjacent cavity region are treated as an independent sub-region for 3D modeling and analysis. The effects of the dimensions of the pads, the mounting height as well as the dimension of shielding cavity on the performance of the input and output impedance over a broad frequency band are investigated combined with the nonlinear model of Schottky junction. Based on a co-simulation procedure of a full wave field analysis combined with a circuit simulator, a full band W-band passive tripler is designed and optimized. The testing results show that with an input driving power of about 20 dBm at Ka-band, the tripler delivers about 5 dBm output power with a variation of less than ±1.25 dB for 75 to 110 GHz frequency range, thus demonstrating the excellent power flatness of the W-band frequency tripler.

参考文献/References:

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备注/Memo

备注/Memo:
收稿日期: 2017-07-04.
作者简介: 窦江玲(1985—),女,博士生;徐金平(联系人),男,博士,教授,博士生导师,jpxu@seu.edu.cn.
基金项目: 国家自然科学基金资助项目(51678134, 51208092, 31370539)、中央高校基本科研业务费专项资金资助项目(3203007405).
引用本文: 窦江玲,徐金平,徐梦苑.基于Schottky管安装电路环境三维模型的W波段全波段三倍频器[J].东南大学学报(自然科学版),2018,48(1):1-6. DOI:10.3969/j.issn.1001-0505.2018.01.001.
更新日期/Last Update: 2018-01-20