[1]刘顺康.储频装置的实验研究[J].东南大学学报(自然科学版),1980,10(3):68-73.[doi:10.3969/j.issn.1001-0505.1980.03.007]
 Liu Shun-kang.Experimental Investigation of Frequency Memory[J].Journal of Southeast University (Natural Science Edition),1980,10(3):68-73.[doi:10.3969/j.issn.1001-0505.1980.03.007]
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储频装置的实验研究()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
10
期数:
1980年第3期
页码:
68-73
栏目:
本刊信息
出版日期:
1980-09-20

文章信息/Info

Title:
Experimental Investigation of Frequency Memory
作者:
刘顺康
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Author(s):
Liu Shun-kang
关键词:
储频行波管 长时间 延迟线 实验研究 开环增益 螺距误差 测试结果 抑制特性 增益波动 频率特性
分类号:
+
DOI:
10.3969/j.issn.1001-0505.1980.03.007
摘要:
本文给出了储频装置关键器件——储频行波管的增益抑制特性和500μs长时间储存特性的测试结果。对储频行波管慢波线螺距的测量结果表明,螺距误差大乃是储频失效的重要原因之一。文中还就不同延迟线的衰减变化对储频时间的影响进行了对比。
Abstract:
This paper gives the test results of gain-suppresion and experimental curves of 500 μs long storage time in memory-storage TWT which is the key device in frequency memory. The measurement of the pitch of a slow-wave structure in memory-storage TWT shows that a large error inpiteh is one of the main reasons of memory failure. The effects of the change of attenuation on storage time in various delay lines are also compared.
更新日期/Last Update: 2013-05-01