[1]魏同立,郑茳,冯耀兰.硅低温双极型晶体管电流增益的分析[J].东南大学学报(自然科学版),1990,20(6):24-30.[doi:10.3969/j.issn.1001-0505.1990.06.004]
 Wei Tongli,Zheng Jiang,Feng Yaolan.Analysis of Current Gain of Siikon Bipolar Transistors for Low Temperature Operation[J].Journal of Southeast University (Natural Science Edition),1990,20(6):24-30.[doi:10.3969/j.issn.1001-0505.1990.06.004]
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硅低温双极型晶体管电流增益的分析()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
20
期数:
1990年第6期
页码:
24-30
栏目:
本刊信息
出版日期:
1990-11-20

文章信息/Info

Title:
Analysis of Current Gain of Siikon Bipolar Transistors for Low Temperature Operation
作者:
魏同立郑茳冯耀兰
东南大学微电子中心; 东南大学微电子中心
Author(s):
Wei Tongli Zheng Jiang Feng Yaolan
Microelectronics Center
关键词:
晶体管 低温/电流增益
分类号:
+
DOI:
10.3969/j.issn.1001-0505.1990.06.004
摘要:
从理论和实验两方面研究了硅晶体管电流增益的低温特性,建立了电流增益的温度模型,阐明了电流增益低温下降的机理,在此基础上探讨了获得具有良好电性能的硅低温晶体管的方法,结论如下:电流增益由发射效率决定时,具有正温度系数,且随温度下降而下降,下降程度随工作电流的减小而增强.发射区采用轻掺杂技术以减小禁带变窄量,并考虑载流子冻析效应,可获得适于低温工作的硅双极晶体管.

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更新日期/Last Update: 2013-04-22