[1]郑其经.ZMR SOI材料中的一种小平面缺陷[J].东南大学学报(自然科学版),1992,22(6):18-22.[doi:10.3969/j.issn.1001-0505.1992.06.004]
 Zheng Qijing.A Faceted Defect in ZMR SOI Materials[J].Journal of Southeast University (Natural Science Edition),1992,22(6):18-22.[doi:10.3969/j.issn.1001-0505.1992.06.004]
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ZMR SOI材料中的一种小平面缺陷()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
22
期数:
1992年第6期
页码:
18-22
栏目:
数学、物理学、力学
出版日期:
1992-11-20

文章信息/Info

Title:
A Faceted Defect in ZMR SOI Materials
作者:
郑其经
东南大学电子工程系
Author(s):
Zheng Qijing
Department of Electronic Engineering
关键词:
再结晶 缺陷 复合材料
分类号:
O793
DOI:
10.3969/j.issn.1001-0505.1992.06.004
摘要:
在ZMRSOI多层复合材料中观察到一种小平面缺陷,这种缺陷是硅衬底表面在ZMR处理过程中某些局部范围内发生熔化和再结晶的结果。本文介绍了该缺陷的特征,分析了热场的温度偏差容限,提出了改进多层结构设计的意见,最后论述了衬底表面局部熔化和再结晶过程,定性地解释了缺陷的主要特征.

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备注/Memo

备注/Memo:
国家自然科学基金
更新日期/Last Update: 2013-04-20