[1]刘卫东,魏同立.MOSFET低温热载流子效应[J].东南大学学报(自然科学版),1994,24(2):15-21.[doi:10.3969/j.issn.1001-0505.1994.02.003]
 Liu Weidong,Wei Tongli.Low Temperature Hot Carrier Effects in MOSFET’s[J].Journal of Southeast University (Natural Science Edition),1994,24(2):15-21.[doi:10.3969/j.issn.1001-0505.1994.02.003]
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MOSFET低温热载流子效应()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
24
期数:
1994年第2期
页码:
15-21
栏目:
电子科学与工程
出版日期:
1994-03-20

文章信息/Info

Title:
Low Temperature Hot Carrier Effects in MOSFET’s
作者:
刘卫东魏同立
东南大学微电子中心
Author(s):
Liu Weidong; Wei Tongli
Microelectronics Center , Southeast University . NanJins 210018
关键词:
低温 热载流子效应 界面态 辐射 蜕变
分类号:
TN386.1
DOI:
10.3969/j.issn.1001-0505.1994.02.003
摘要:
与常温下相比,低温工作MOS器件具有许多优点,但低温热载流子引起的器件蜕变却明显增强。本文简要研究了这种效应,包括低温热载流子的行为和界面态的产生及其对器件特性蜕变的影响,最后,从器件结构和工作条件等方面提出了抑制低温热载流子效应的设计考虑。

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备注/Memo

备注/Memo:
国家自然科学基金
更新日期/Last Update: 2013-04-19