[1]李垚,魏同立.ECL电路传输延迟时间tpd的全温区分析[J].东南大学学报(自然科学版),1996,26(1):1-7.[doi:10.3969/j.issn.1001-0505.1996.01.001]
 Li Yao,Wei,Tongli.Analysis of Propagation Delay tpd for ECL Circuits in the Whole Range of 77 ̄300K[J].Journal of Southeast University (Natural Science Edition),1996,26(1):1-7.[doi:10.3969/j.issn.1001-0505.1996.01.001]
点击复制

ECL电路传输延迟时间tpd的全温区分析()
分享到:

《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
26
期数:
1996年第1期
页码:
1-7
栏目:
电子科学与工程
出版日期:
1996-01-20

文章信息/Info

Title:
Analysis of Propagation Delay tpd for ECL Circuits in the Whole Range of 77 ̄300K
作者:
李垚魏同立
东南大学微电子中心
Author(s):
Li Yao;Wei Tongli
Microelectronics Center, Southeast University, Nanjing 210018
关键词:
低温 ECL电路 延迟时间 线性化/SPICE
分类号:
TN710.9
DOI:
10.3969/j.issn.1001-0505.1996.01.001
摘要:
给出了适于全温区(77~300K)的ECL电路传输延迟时tpd的分析表达式,结合SPICE模拟结果,讨论了不同温度下tpd与各参数的关系,并采用灵敏度分析方法,推导出不同温度下tpd的线性化表示..

相似文献/References:

[1]刘卫东,魏同立.MOSFET低温热载流子效应[J].东南大学学报(自然科学版),1994,24(2):15.[doi:10.3969/j.issn.1001-0505.1994.02.003]
 Liu Weidong,Wei Tongli.Low Temperature Hot Carrier Effects in MOSFET’s[J].Journal of Southeast University (Natural Science Edition),1994,24(1):15.[doi:10.3969/j.issn.1001-0505.1994.02.003]
[2]刘卫东,魏同立,李垚.低温CMOS-器件物理和互连特性[J].东南大学学报(自然科学版),1995,25(4):64.[doi:10.3969/j.issn.1001-0505.1995.04.012]
 Liu Weidong,Wei,Tongli,et al.Low-Temperature CMOS-Device Physics and Interconnection Properties[J].Journal of Southeast University (Natural Science Edition),1995,25(1):64.[doi:10.3969/j.issn.1001-0505.1995.04.012]
[3]方峰,蒋建清,马驰.硫酸羟胺对低温磷化过程的影响[J].东南大学学报(自然科学版),2007,37(3):470.[doi:10.3969/j.issn.1001-0505.2007.03.023]
 Fang Feng,Jiang Jianqing,Ma Chi.Effect of hydroxylamine sulfate accelerator on low-temperature phosphating process[J].Journal of Southeast University (Natural Science Edition),2007,37(1):470.[doi:10.3969/j.issn.1001-0505.2007.03.023]
[4]李垚,魏同立,沈克强.低温高速双极晶体管基区的优化设计[J].东南大学学报(自然科学版),1995,25(3):34.[doi:10.3969/j.issn.1001-0505.1995.03.007]
 Li Yao,Wei Tongli,et al.Optimizing the Base Profile for High-SpeedBipolar Transistore at Low Temperature[J].Journal of Southeast University (Natural Science Edition),1995,25(1):34.[doi:10.3969/j.issn.1001-0505.1995.03.007]
[5]曹俊诚,魏同立.77KMOS器件计算机模拟及软件实现[J].东南大学学报(自然科学版),1994,24(5):42.[doi:10.3969/j.issn.1001-0505.1994.05.008]
 Cao Juncheng,Wei Tongli.Simulation and Softwae for MOSFET at 77K[J].Journal of Southeast University (Natural Science Edition),1994,24(1):42.[doi:10.3969/j.issn.1001-0505.1994.05.008]
[6]张丰,白银,蔡跃波.溴化钙对水泥基材料强度及微观结构影响[J].东南大学学报(自然科学版),2020,50(2):311.[doi:10.3969/j.issn.1001-0505.2020.02.015]
 Zhang Feng,Bai Yin,Cai Yuebo.Effect of calcium bromide on strength and microstructure of cement-based materials[J].Journal of Southeast University (Natural Science Edition),2020,50(1):311.[doi:10.3969/j.issn.1001-0505.2020.02.015]

备注/Memo

备注/Memo:
国家自然科学基金
更新日期/Last Update: 2013-04-14