[1]赵平,魏同立,吴金.深亚微米器件Monte Carlo模拟的数学模型[J].东南大学学报(自然科学版),1999,29(1):8-13.[doi:10.3969/j.issn.1001-0505.1999.01.002]
 Zhao Ping,Wei Tongli,Wu Jin.Mathematical Model on Monte Carlo Simulation for Deep Submicrometer Device[J].Journal of Southeast University (Natural Science Edition),1999,29(1):8-13.[doi:10.3969/j.issn.1001-0505.1999.01.002]
点击复制

深亚微米器件Monte Carlo模拟的数学模型()
分享到:

《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
29
期数:
1999年第1期
页码:
8-13
栏目:
电子科学与工程
出版日期:
1999-01-20

文章信息/Info

Title:
Mathematical Model on Monte Carlo Simulation for Deep Submicrometer Device
作者:
赵平 魏同立 吴金
东南大学微电子中心, 南京 210096
Author(s):
Zhao Ping Wei Tongli Wu Jin
Microelectronics Center, Southeast University, Nanjing 210096
关键词:
Monte Carlo方法 数学模型 散射 深亚微米器件
Keywords:
Monte Carlo method (MCM) mathematical model scattering deep submicrometer device
分类号:
TN302
DOI:
10.3969/j.issn.1001-0505.1999.01.002
摘要:
讨论了深亚微米半导体器件模拟的Monte Carlo方法(MCM),并简要阐述了玻耳兹曼模型(BTM)、漂移扩散模型 (DDM)和流体动力学模型(HDM)之间的关系.
Abstract:
We discuss Monte Carlo method (MCM) for semiconductor device simulation,and describe the relations among Boltzmann transport model (BTM), drift diffusion model (DDM) and hydrodynamic model (HDM).

参考文献/References:

[1] 叶良修.小尺寸半导体器件的蒙特卡罗模拟.北京:科学出版社,1997
[2] Fawcett W,Boardman A D,Swain S.Monte Carlo determination of electron transport properties in gallium arsenide.J Phys Chem Solids,1970,31:1963~1990
[3] Jacoboni C,Reggiani L.The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials.Reviews of Modern Physics,1983,55(3):645~705
[4] Koichi Kato.Hot-carrier simulation for MOSFET’s using a high-speed Monte Carlo method.IEEE Trans Devices,1988,35(8):1344~1350
[5] Hiroyuki Kurino,Hiroyuki Kiba,Hiroki Mori,et al.Coupled Monte Carlo-energy relaxation analysis of hot carrier light emission in metal oxide semiconductor field effect transistors’s.Jan J Appl Phys,1991,30(12B):3666~3670
[6] Bandyopadhyay S,Klausmeier M E,Maziar C M.A rigorous technique to couple Monte Carlo and drifft-diffuion models computationally efficient device simulation.IEEE Trans Devices,1987,34(2):392~399
[7] Higman J M,Hess K,Hwang C G.Coupled Monte Carlo-drift diffusion analysis of hot-electron effects in MOSFET’S.IEEE Trans Devices,1989,36(5):930~937
[8] Selberherr H K.A hybrid device simulator combines Monte Carlo and drift-diffusion analysis.IEEE Trans CAD,1994,13 (2):201~210
[9] Woolard D L,Tian Hong,Littlejohn M A,et al.Efficient ohmic boundary conditions for the Monte Carlo simulation of electron transport.IEEE Trans Devices,1994,41 (4):601~606
[10] Nguye P T,Navon D H,Tang Tingwei.Boundary conditions in regional Monte Carlo device analyst.IEEE Trans Devices 1985,32(4):783~787
[11] Takashi Hori,Takatoshi Yasui,Susumu Akamatsu.Hot-carrier effects in MOSFET’S with nitrided-oxide gate-dielectrics prepared by rapid thermal processing.IEEE Trans Devices,1992,39(1):134~147
[12] Ellis-Monaghan J J,Hulfachor P R,Kim K W,et al.Ensemble Monte Carlo study of interface-state generation in low-voltage scaled silicon MOS devices.IEEE Trans Devices,1996,43 (7):1123~1132
[13] Jose Miguel Mirand Pantoja,Jose Luis Sebastian France.Monte Carlo simulation of electron velocity in degenerate GaAs.IEEE Devices Lett,1997,18(6):258~260

相似文献/References:

[1]陈美军,张志胜,史金飞.基于自适应多态蚁群算法的多约束车辆路径问题[J].东南大学学报(自然科学版),2008,38(1):37.[doi:10.3969/j.issn.1001-0505.2008.01.008]
 Chen Meijun,Zhang Zhisheng,Shi Jinfei.Vehicle routing problem with multiple constraints using adaptive and polymorphic ant colony algorithm[J].Journal of Southeast University (Natural Science Edition),2008,38(1):37.[doi:10.3969/j.issn.1001-0505.2008.01.008]
[2]陈树东,孙伟,张云升,等.粉煤灰混凝土二维、三维碳化深度的预测[J].东南大学学报(自然科学版),2007,37(4):645.[doi:10.3969/j.issn.1001-0505.2007.04.020]
 Chen Shudong,Sun Wei,Zhang Yunsheng,et al.Carbonation depth prediction of fly ash concrete subjected to 2 and 3 dimensional CO2 attack[J].Journal of Southeast University (Natural Science Edition),2007,37(1):645.[doi:10.3969/j.issn.1001-0505.2007.04.020]
[3]刘闯,朱学忠,刘迪吉.开关磁阻电机的非线性电感参数法仿真分析[J].东南大学学报(自然科学版),2001,31(4):106.[doi:10.3969/j.issn.1001-0505.2001.04.025]
 Liu Chuang,Zhu Xuezhong,Liu Diji.Simulation Analysis of Non-Linear Inductance Parameters Method for SRM[J].Journal of Southeast University (Natural Science Edition),2001,31(1):106.[doi:10.3969/j.issn.1001-0505.2001.04.025]
[4]杨兰和.非等温条件下雷管热爆炸临界温度数值计算[J].东南大学学报(自然科学版),2000,30(5):126.[doi:10.3969/j.issn.1001-0505.2000.05.028]
 Yang Lanhe.Numerical Calculation for Critical Temperature of Thermal Explosion in Detonators Under Nonisothermal Conditions[J].Journal of Southeast University (Natural Science Edition),2000,30(1):126.[doi:10.3969/j.issn.1001-0505.2000.05.028]
[5]韩瑞珠,盛昭瀚.社会经济领域中一类扩散现象的数学模型[J].东南大学学报(自然科学版),2002,32(4):668.[doi:10.3969/j.issn.1001-0505.2002.04.030]
 Han Ruizhu,Sheng Zhaohan.Mathematical model of a diffusion phenomenon in social-economic region[J].Journal of Southeast University (Natural Science Edition),2002,32(1):668.[doi:10.3969/j.issn.1001-0505.2002.04.030]
[6]史伟伟,蒋全,胡敏强,等.三相电压型PWM整流器的数学模型和主电路设计[J].东南大学学报(自然科学版),2002,32(1):50.[doi:10.3969/j.issn.1001-0505.2002.01.012]
 Shi Weiwei,Jiang Quan,Hu Minqiang,et al.Mathematical model and main circuit design of three-phase voltage-source PWM rectifier[J].Journal of Southeast University (Natural Science Edition),2002,32(1):50.[doi:10.3969/j.issn.1001-0505.2002.01.012]
[7]袁竹林,杨思文.双级氨吸收制冷数学模型及对中间压力的研究[J].东南大学学报(自然科学版),1996,26(2):38.[doi:10.3969/j.issn.1001-0505.1996.02.006]
 Yuan Zhulin,Yang Siwen.A Mathematical Model of a Two-Stage Ammonia Absorption Refrigeration System and the Study of the Middle-Pressure[J].Journal of Southeast University (Natural Science Edition),1996,26(1):38.[doi:10.3969/j.issn.1001-0505.1996.02.006]
[8]吕剑虹,徐治皋,陈来九.由矩阵奇值分解确定热工过程的动态数学模型[J].东南大学学报(自然科学版),1990,20(3):19.[doi:10.3969/j.issn.1001-0505.1990.03.004]
 Determination of the Dynamic Math Model for Thermal Process Via Matrix Singular-Value Decomposition[J].Journal of Southeast University (Natural Science Edition),1990,20(1):19.[doi:10.3969/j.issn.1001-0505.1990.03.004]
[9]陶为民,吴申庆,刘友鹏.界面的空间相对位置和两面角的测量误差[J].东南大学学报(自然科学版),1990,20(6):102.[doi:10.3969/j.issn.1001-0505.1990.06.015]
 Tao Weimin,Wu Shenqing,Liu Youpeng.Relative Space Pesitions of Interfaces and the Error of Dihedral Angle[J].Journal of Southeast University (Natural Science Edition),1990,20(1):102.[doi:10.3969/j.issn.1001-0505.1990.06.015]
[10]胡乾善.振动系统力学模型的建立与改进问题[J].东南大学学报(自然科学版),1986,16(2):1.[doi:10.3969/j.issn.1001-0505.1986.02.001]
 Hu Qianshan.The Problem of Modeling Vibration Systems and Model Improvement[J].Journal of Southeast University (Natural Science Edition),1986,16(1):1.[doi:10.3969/j.issn.1001-0505.1986.02.001]

备注/Memo

备注/Memo:
第一作者:男,1965年生,博士研究生.
更新日期/Last Update: 1999-01-20