[1]吴金,杨廉峰,刘其贵,等.亚微米GeSi HBT的物理模型与数值模拟方法[J].东南大学学报(自然科学版),2000,30(1):62-67.[doi:10.3969/j.issn.1001-0505.2000.01.012]
 Wu Jin,Yang Lianfeng,Liu Qigui,et al.Analysis of Physical Models and Numerical Simulation for Submicron GeSi HBT[J].Journal of Southeast University (Natural Science Edition),2000,30(1):62-67.[doi:10.3969/j.issn.1001-0505.2000.01.012]
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亚微米GeSi HBT的物理模型与数值模拟方法()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
30
期数:
2000年第1期
页码:
62-67
栏目:
电子科学与工程
出版日期:
2000-01-20

文章信息/Info

Title:
Analysis of Physical Models and Numerical Simulation for Submicron GeSi HBT
作者:
吴金 杨廉峰 刘其贵 夏君 魏同立
东南大学微电子中心,南京 210096
Author(s):
Wu Jin Yang Lianfeng Liu Qigui Xia Jun Wei Tongli
Microelectronic Center, Southeast University, Nanjing 210096
关键词:
GeSi HBT 输运模型 离散 线性化
Keywords:
GeSi HBT transport model discretization linearization
分类号:
TN302
DOI:
10.3969/j.issn.1001-0505.2000.01.012
摘要:
系统分析了小尺寸半导体器件中的载流子非本地输运模型,重点研究了非均匀能带结构和异质结效应对输运电流密度的影响.同时,给出了归一化处理后的系统数学模型,并对器件的边界条件、参数模型、方程的离散及线性化处理等问题进行了讨论.
Abstract:
This paper analyzes the carrier non-local transport model of small-size semiconductor devices and studies the influences of nonsymmetrical band structure and heterogeneous effect on emphasis. And for the numerical simulation, this paper presents the unitary mathematical model and discusses some problems in the simulation process, such as the boundary conditions, parameter models, discretigation of nonlinear equations and its linearization, etc.

参考文献/References:

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[2] 郭宝增.Si/Si1-xGex应变层异质结双极晶体管(HBT)交直流特性的仿真研究.半导体学报,1998,19(10):764~772
[3] Garcia-Loureiro A J .Numerical analysis of abrupt heterojunction bipolar transistors.Int J Numerical Modelling,1998(11):221~229
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[5] Grinbert A A.An investigation of effect of graded layers and tunneling on the performance of AlGaAs/GaAs HBT’s.IEEE Trans Electron Devices,1984(31):1758
[6] Schuelke R J.Large-signal analysis of a silicon realdiode oscillator.IEEE Trans Electron Devices,1969(16):64
[7] People R.Band alignments of coherently strained GeSi substrates.Appl Phys Lett,1986(48):538
[8] Choi Woo-Sung.A time dependent hydrodynamic device simulator SNU-2D with new discretization scheme and algorithm.IEEE Trans CAD,1994,13(7):899~907

备注/Memo

备注/Memo:
基金项目:国家自然科学基金(69806002) 和江苏省自然科学基金(BK97006) 资助项目.
第一作者:男, 1965年生, 博士,副教授.
更新日期/Last Update: 2000-01-20